MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHF15N65E-GE3


Vishay Semiconductors MOSFET 650V 280mOhm10V 15A N-Ch E-SRS
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Vishay 0
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AUD 1.89

Multiples of: 50

15 A650 V280 mOhmsn - channel 4 V- 55 C+ 150 C34 Wthrough holeTO - 220FP - 3-si1 channel30 V48 nCenhancement  
MTP3N50E


MOSFET, N TO-220
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XON.COM 0
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AUD 1.89

Multiples of: 1

   N Channel               
PSMN1R8-40YLC


MOSFET, N-CH, 40V, 100A, LFPAK
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Nexperia 0
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AUD 1.89

Multiples of: 1

   N Channel               
TK72A12N1,S4X(S


Trans MOSFET N-CH 120V 179A 3-Pin(3+Tab) TO-220SIS
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Toshiba 0
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AUD 1.8902

Multiples of: 1

179 A  N    45 WThrough Hole      Enhancement  
TK1R4F04PB,LXGQ


MOSFET 205W 1MHz Automotive; AEC-Q101
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Toshiba 0
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AUD 1.8904

Multiples of: 1

160 A40 V1.35 mOhmsN - Channel 3 V-+ 175 C205 WSMD/SMTTO - 220SM - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V103 nCEnhancementAEC - Q101 
FDB8870_F085


Fairchild Semiconductor MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH
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ON Semiconductor 0
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AUD 1.8905

Multiples of: 1

23 A30 V3.9 mOhmsn - channel  - 55 C+ 175 C160 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V enhancement  
IPI65R280C6


Infineon Technologies MOSFET N-Ch 700V 13.8A I2PAK-3 CoolMOS C6
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Infineon 0
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AUD 1.8908

Multiples of: 1

13.8 A700 V280 mOhmsn - channel  - 55 C+ 150 C104 Wthrough holeI2PAK - 3Tubesi1 channel20 V45 nC  coolmos
NCE1570


MOSFET TO-220-3L RoHS
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NCE Power 0
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AUD 1.8913

Multiples of: 1

                   
VBP1104N


MOSFET N Channel 100V 50A 3V @ 250uA 35mO @ 30A,10V TO-247AC RoHS
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VBsemi Elec 0
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AUD 2.0032

Multiples of: 1

                   
IPB60R280CFD7ATMA1


650V 9A 51W 280mO@3.6A,10V N Channel TO-263-3-2 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 1.8931

Multiples of: 1

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