MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC110N15NS5


MOSFET TRENCH >=100V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 1865
Ships to you
between Tue. 29 Sep to Fri. 02 Oct
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AUD 1.8861

Multiples of: 1

                   
TK3R9E10PL,S1X


MOSFET TO-220 PD=230W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 1.8857

Multiples of: 1

100 A100 V5.8 mOhmsN - Channel 2.5 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V96 nCEnhancement U - Mosix - H
NTMFD5C650NLT1G


MOSFET T6 60V LL S08FL DS
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ON Semiconductor 0
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AUD 1.8857

Multiples of: 1

111 A60 V4.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V37 nCEnhancement  
FDPF035N06B_F152


Fairchild Semiconductor MOSFET
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ON Semiconductor 0
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AUD 1.8869

Multiples of: 1

88 A60 V3.5 mOhmsn - channel 4 V- 55 C+ 175 C46.3 Wthrough holeTO - 220 - 3Tube  20 V76 nC   
IRFPE30PBF


MOSFET N Trench 800V 4.1A 4V @ 250uA 3 Ω @ 2.5A,10V TO-247 (AC) RoHS
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Infineon 0
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AUD 1.887

Multiples of: 1

                   
IRFH4251DTRPBF


International Rectifier MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A
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Infineon 0
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AUD 1.8875

Multiples of: 4000

64 A25 V3.2 mOhmsN - Channel20 V1.6 V- 55 C+ 150 C31 w , 63 WSmd/SmtPQFN - 8ReelSi2 Channel20 V15 nC , 66 nCEnhancement Fastirfet
STF18N65M5


MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh V
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STMicroelectronics 0
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AUD 1.8878

Multiples of: 1

9.4 A650 V220 mOhmsn - channel    25 Wthrough holeTO - 220 - 3 FPTubesi1 channel    mdmesh
SiHJ6N65E-T1-GE3


MOSFET 650V Vds +/-30V Vgs Rds(on) 0.598 @ 10V
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Vishay 0
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AUD 1.8885

Multiples of: 1

5.6 A650 V755 mOhmsN - Channel 2 V- 55 C+ 150 C74 WSmd/SmtSO - 8L - 4ReelSi1 Channel+/- 30 V32 nCEnhancement Trenchfet
AOTF7S60L


MOSFET N-CH 600V 7A TO220F
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Alpha & Omega 0
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AUD 1.8886

Multiples of: 1000

           -       
SQM60N06-15_GE3


MOSFET 60V 60A 100W AEC-Q101 Qualified
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Vishay 0
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AUD 1.8895

Multiples of: 1

60 A60 V15 mOhmsN - Channel 2.5 V- 55 C+ 175 C3.75 WSmd/SmtTO - 252 - 3ReelSi1 Channel20 V33 nCEnhancementAec - Q101Trenchfet
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