MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF6614TRPBF


N-Channel 40 V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
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Infineon 87
Ships to you
between Tue. 29 Sep to Fri. 02 Oct Calender.png

AUD 16.2284
Multiples of: 1

12.7 A40 V7.1 mOhmsN - Channel20 V   42 WSmd/SmtDirectfetReelSi1 Channel20 V19 nC  Directfet
SSF65R190S2


650V 20A 160mO@10V,10A 34W N Channel TO-220F-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Super Semiconductor 0
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AUD 1.8819
Multiples of: 1

                   
BSC031N06NS3GXT


Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
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Infineon 0
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AUD 1.8821
Multiples of: 5000

                   
SI4421DY-T1-GE3


Vishay Semiconductors MOSFET 20V 14A 3.0W 8.75mohm 4.5V
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Vishay 0
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AUD 1.8852
Multiples of: 1

10 A- 20 V8.75 mOhmsP - Channel8 V - 55 C+ 150 C1.5 WSmd/SmtSOIC - 8 NarrowReelSi   Enhancement Trenchfet
IPI120N04S402AKSA1


Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
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Infineon 0
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AUD 1.8854
Multiples of: 50

            Optimos T2      
NTE489


Transistor: P-JFET; 30V; TO92
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NTE 0
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AUD 1.8857
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TK3R9E10PL,S1X


MOSFET TO-220 PD=230W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 1.8857
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100 A100 V5.8 mOhmsN - Channel 2.5 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V96 nCEnhancement U - Mosix - H
NTMFD5C650NLT1G


MOSFET T6 60V LL S08FL DS
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ON Semiconductor 0
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AUD 1.8857
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111 A60 V4.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C125 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V37 nCEnhancement  
IRFS38N20DPBF


Transistor: N-MOSFET; unipolar; 200V; 44A; 320W; D2PAK
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Infineon 0
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AUD 1.8857
Multiples of: 1

44 A200 V54 mOhmsN - Channel  - 55 C+ 175 C320 WSmd/SmtD2PAKTubeSi1 Channel30 V60 nCEnhancement  
IPP80P03P4-05


Infineon Technologies MOSFET P-Ch -30V -80A TO220-3
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Infineon 0
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AUD 1.8857
Multiples of: 1

- 80 A- 30 V4.7 mOhmsp - channel     through holeTO - 220 - 3Tubesi1 channel     
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