MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4925BDY-T1-E3


MOSFET 30 Volt 7.1 Amp 2.0W
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
6 to 16 Weeks Calender.png

AUD 1.1225
Multiples of: 2500

   P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8 NarrowReel      Trenchfet
NVMFD5C466NLWFT1G


MOSFET T6 40V LL S08FL DS
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ON Semiconductor 0
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AUD 1.1226
Multiples of: 1

52 A40 V6.2 mOhms , 6.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C40 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V16 nC , 16 nCEnhancementAec - Q101 
2SJ601-Z


MOSFET TO-252 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 1.1232
Multiples of: 1

                   
SI6463BDQ-T1-GE3


MOSFET 20V 7.4A 1.5W 15mohm 4.5V
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Vishay 0
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AUD 1.1235
Multiples of: 1

7.4 A- 20 V15 mOhmsp - channel8 V - 55 C+ 150 C1.5 Wsmd/smtTSSOP - 8Reel    enhancement trenchfet
SIA814DJ-T1-GE3


MOSFET 30V 4.5A 6.5W 61mohm 10V
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Vishay 0
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AUD 1.1235
Multiples of: 1

4.3 A30 V50 mOhmsn - channel12 V - 55 C+ 150 C1.9 Wsmd/smtSC - 70 - 6Reel    enhancement  
IRF7854PBF


MOSFET 80V Single N-Ch 13.4mOhms 27nC
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Infineon 0
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AUD 1.1235
Multiples of: 1

10 A80 V13.4 mOhmsn - channel20 V - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8Tube   27 nCenhancement  
IPD60R520C6ATMA1


MOSFET N-Ch 600V 8.1A DPAK-2
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Infineon 0
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AUD 1.1235
Multiples of: 2500

                   
FDD14AN06LA0_F085


Fairchild Semiconductor MOSFET 60V N-CHAN PwrTrench
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ON Semiconductor 0
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AUD 1.1243
Multiples of: 1

50 A60 V12.8 mOhmsn - channel  - 55 C+ 175 C125 Wthrough holeDPAK - 3Reelsi1 channel     
FCU360N65S3R0


MOSFET SUPERFET3 650V 10A 360 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 1.1246
Multiples of: 1

10 A650 V360 mOhmsN - Channel 2.5 V- 55 C+ 150 C83 WThrough HoleIPAK - 3TubeSi1 Channel30 V18 nCEnhancement  
IPD096N08N3G


MOSFET PG-TO252-3 RoHS
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Infineon 0
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AUD 1.1246
Multiples of: 1

                   
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