MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUC100N08S5N043ATMA1


MOSFET MOSFET_75V 120V
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Infineon 8593
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between Thu. 17 Sep to Mon. 21 Sep
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AUD 1.0701

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HAT2092R-EL-E


Trans MOSFET N-CH 30V 11A 8-Pin SOP T/R
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Renesas 0
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AUD 1.1164

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11 A  n    3 Wsurface mount Tape And Reel    enhancement  
IRF624PBF-BE3


N-Channel 250V 4.4A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 1.1164

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4.4 A250 V1.1 OhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V14 nCEnhancement  
SI4830CDY-T1-E3


Vishay Semiconductors MOSFET 30V 8.0A 2.9W 20mohm 10V
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Vishay 0
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AUD 1.1173

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5.7 A30 V20 mOhmsn - channel  - 55 C+ 150 C2 Wsmd/smtSO - 8Reelsi2 channel20 V enhancement trenchfet
SISF00DN-T1-GE3


MOSFET 30V S1-S2 Cmn Drn PowerPAK 1212-8SCD
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Vishay 0
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AUD 1.1173

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60 A30 V4.2 mOhmsN - Channel 2.1 V- 55 C+ 150 C69.4 WSmd/SmtPOWERPAK - 1212 - 8SCD - 8Cut TapeSi2 Channel- 16 v , 20 V53 nCEnhancement Trenchfet, Powerpak
HSBA005N03


PRPAK5x6 MOSFETs ROHS
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HUASHUO 0
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AUD 1.1175

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QM3100M6-VB


30V 1.8m@10V 2V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 0
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AUD 1.1175

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HY4504B6


MOSFET N Trench 40V 322A (Tc) 4V @ 250uA 2 mΩ @ 140A,10V TO-263-6L RoHS
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HuaYi 0
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AUD 1.1178

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FDMS6681Z


mosfet p trench 30v 21.1a 3v @ 250ua 3.2 m @ 22.1a,10v power 56 rohs
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ON Semiconductor 0
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AUD 1.1179

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SIR402DP-T1-E3


MOSFET, N, SO-8
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Vishay 0
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AUD 1.1182

Multiples of: 1

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