MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMTH6010LPD-13


MOSFET MOSFET BVDSS: 41V-60V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 1.1144
Multiples of: 2500

47.6 A60 V11 mOhmsN - Channel 1 V- 55 C+ 175 C37.5 WSMD/SMTPowerdi5060 - C - 8Reel , Cut TapeSi2 Channel- 20 V , 20 V40.2 nCEnhancement  
CSD18511KCS


MOSFET 40-V, N channel NexFET power MOSFET, single TO-220, 2.6 mOhm 3-TO-220 -55 to 175
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Texas Instruments 0
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AUD 1.1147
Multiples of: 250

194 A40 V3.2 mOhmsN - Channel 1.5 V- 55 C+ 175 C188 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V64 nCEnhancement  
STB7N52K3


N-Channel 525 V 6A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 1.1154
Multiples of: 1

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APM4050APUC


MOSFET TO-252 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 1.1155
Multiples of: 1

                   
SIA433EDJ


MOSFET QFN6(2X2) RoHS
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VBsemi Elec 0
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AUD 1.1155
Multiples of: 1

                   
IPI80N06S4-07


Infineon Technologies MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2
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Infineon 0
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AUD 1.1158
Multiples of: 1

80 A60 V7.1 mOhmsn - channel20 V4 V- 55 C+ 175 C79 Wthrough holeI2PAK - 3Tubesi1 channel20 V43 nCenhancement optimos
SQ9945BEY-T1_GE3


MOSFET 60V 5.4A 4W AEC-Q101 Qualified
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Vishay 0
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AUD 1.116
Multiples of: 1

5.4 A60 V45 mOhms , 45 mOhmsN - Channel 1.5 V- 55 C+ 175 C4 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V12 nC , 12 nCEnhancementAec - Q101Trenchfet
CS18N50FA9R


500V 18A 42.8W 310m@10V,9A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS
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CRMICRO 0
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AUD 1.1161
Multiples of: 1

                   
SIHU2N80E-GE3


MOSFET 800V Vds 30V Vgs IPAK (TO-251)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 1.1161
Multiples of: 3000

2.8 A800 V2.38 OhmsN - Channel 4 V- 55 C+ 150 C62.5 WThrough HoleTO - 251 - 3Cut TapeSi1 Channel10 V9.8 nCEnhancement  
STL10N60M6


N-Channel Power MOSFET 600V 5.5A 8-Pin PowerFLAT T/R
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STMicroelectronics 0
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AUD 1.1163
Multiples of: 1

5.5 A600 V660 mOhmsN - Channel 3.25 V- 55 C+ 150 C48 WSmd/SmtPowerflat5x6 - 4  1 Channel25 V8.8 nCEnhancement  
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