MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STL260N3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 0.9921

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260 A30 V1.3 mOhmsN - Channel20 V1 V- 55 C+ 175 C166 WSmd/SmtPowerflat - 5Cut TapeSi1 Channel20 V61.5 nCEnhancement Stripfet
SISS5112DN-T1-GE3


MOSFETs N-CHANNEL 100-V (D-S) MOSFET
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AUD 0.9925

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40.7 A100 V14.9 mOhmsN - Channel 4 V- 55 C+ 150 C52 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.6 nCEnhancement  
kia70n06-VB


60V 75A 11m@10V,75A 3W 3V@250uA TO-263 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.9926

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HA9N90


MOSFET N Trench 900V 9A (Tc) 4.5V @ 250uA 1.4 Ω @ 4.5A,10V TO-3P RoHS
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AUD 0.9926

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FDMC612PZ


MOSFET P-Channel PowerTrench MOSFET -20V, -14A, 8.4mO
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ON Semiconductor 0
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AUD 0.9929

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- 40 A- 20 V13 mOhmsp - channel - 0.9 V- 55 C+ 150 C26 Wsmd/smtMLP - 8 3.3X3.3Reelsi1 channel 53 nC  powertrench
ISZ143N13NM6ATMA1


MOSFETs N
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Infineon 0
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AUD 0.9931

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54 A135 V14.3 mOhmsN - Channel 3.5 V  95 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V21 nCEnhancement  
NTB6413ANG


MOSFET NFET D2PAK 100V 42A 28MO
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AUD 0.9932

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42 A100 V28 mOhmsn - channel     smd/smtD2PAK - 3        
PTA20N50A


TO-220F-3 MOSFETs ROHS
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AUD 0.9932

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SIS890ADN-T1-GE3


N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
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Vishay 0
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AUD 0.9932

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24.7 A100 V25.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C39 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V19.2 nCEnhancement TrenchFET
FDS6812A


MOSFET SO-8
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AUD 0.9935

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6.7 A20 V22 mOhmsn - channel12 V - 55 C+ 150 C2 Wsmd/smtSOIC - 8 NarrowReel    enhancement  
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