MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFZ44ZSPBF


Transistor: N-MOSFET; unipolar; 55V; 36A; 80W; D2PAK
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Infineon 0
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AUD 0.99

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51 A55 V13.9 mOhmsN - Channel    80 WSmd/SmtD2PAKTubeSi1 Channel20 V29 nC   
TJ15S06M3L(T6L1,NQ


MOSFET P-Ch MOS 1770pF 41W 36nC -15A -60V
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AUD 0.99

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15 A60 V63 mOhmsP - Channel    41 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel 36 nC   
AON6404A


MOSFET N-CH 30V 25A DFN5X6
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Alpha & Omega 0
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AUD 0.99

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IPP040N06N3 G


MOSFET OptiMOS 3 PWR TRANS 60V 90A
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AUD 1.001

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90 A60 V3.3 mOhmsN - Channel 2 V- 55 C+ 175 C188 WThrough HoleTO - 220TubeSi1 Channel20 V98 nCEnhancement Optimos
SLF80R850SJ


TO-220F-3 MOSFETs ROHS
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Maplesemi 0
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AUD 0.9903

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VS4603GPMT


PDFN5x6 MOSFETs ROHS
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Vanguard 0
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AUD 0.9903

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RU6099R


MOSFET N Trench 60V 120A 4V @ 250uA 7 mΩ @ 40A,10V TO-220 (TO-220-3) RoHS
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Ruichips 0
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AUD 0.9903

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IRF7324PBF


Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
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Infineon 0
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AUD 0.9904

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9 A20 V18 mOhmsP - Channel  - 55 C+ 150 C2 WSmd/SmtSOIC - 8TubeSi2 Channel12 V42 nCEnhancement  
FDPF7N60NZ


N-Channel 600 V 6.5A (Tc) 33W (Tc) Through Hole TO-220F-3
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ON Semiconductor 0
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AUD 0.9905

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6.5 A600 V1.25 OhmsN - Channel 5 V- 55 C+ 150 C33 WThrough HoleTO - 220FTubeSi1 Channel 17 nCEnhancement Unifet
WML10N70C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 700V; 7.5A; 27W
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Wayon 0
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AUD 0.9908

Multiples of: 1

            Sj - Mosfet C2      
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