MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK5A60D(STA4,Q,M)


Toshiba MOSFET N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm
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Toshiba 0
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AUD 0.9853
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5 A600 V1.2 Ohmsn - channel30 V4.4 V- 55 C+ 150 C35 Wthrough holeTO - 220 - 3Reelsi1 channel30 V16 nC   
SUD50N04-8M8P-4BE3


MOSFET N-CHANNEL 40V D-S
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AUD 0.9853
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           Cut Tape       
RUH40130M


MOSFET N Trench 40V 130A (Tc) 3V @ 250uA 3.4 mΩ @ 35A,4.5V PDFN5060 RoHS
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AUD 0.9855
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UF3205L-TA3-T


MOSFET N Trench 55V 110A 4V @ 250uA 8 mΩ @ 62A,10V TO-220 (TO-220-3) RoHS
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AUD 0.9855
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TPD60R330M


MOSFET TO-252 RoHS
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AUD 0.9855
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IRLR2908PBF


Transistor: N-MOSFET; unipolar; 80V; 39A; 120W; DPAK
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Infineon 0
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AUD 0.9857
Multiples of: 1

   N - Channel  - 55 C+ 175 C Smd/SmtDPAK - 3Tube       
GC11N65D5


330m DFN-8L(5x6) MOSFETs ROHS
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AUD 0.9857
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FQB33N10LTM


N-Channel 100 V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263)
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ON Semiconductor 0
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AUD 0.9864
Multiples of: 800

33 A100 V52 mOhmsN - Channel  - 55 C+ 175 C3.75 WSmd/SmtD2PAKReelSi1 Channel20 V Enhancement  
IPB45N06S4L-08


MOSFET N-Ch 60V 45A D2PAK-2 OptiMOS-T2
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Infineon 0
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AUD 0.9867
Multiples of: 1

45 A60 V7.9 mOhmsn - channel  - 55 C+ 175 C71 Wsmd/smtTO - 263Reelsi1 channel16 V49 nC  optimos
SIHU6N80AE-GE3


MOSFET N-CHANNEL 800V IPAK TO-251
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AUD 0.9867
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5 A800 V950 mOhmsN - Channel 4 V- 55 C+ 150 C62.5 WSMD/SMTTO - 251 - 3Cut Tape , ReelSi1 Channel- 30 V , + 30 V15 nCEnhancement  
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