MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NVMFS014P04M8LT1G


MOSFET MV8 40V P-CH LL IN S08FL PACKAGE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 0.9808
Multiples of: 1

                   
HYG016N04NR1B


TO-263-2L MOSFETs ROHS
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HuaYi 0
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AUD 0.9808
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CSD17313Q2Q1T


MOSFET Automotive 30-V N-Channel NexFET Power MOSFET 6-WSON -55 to 150
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Texas Instruments 0
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AUD 0.9808
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5 A30 V24 mOhmsN - channel 1.3 V- 55 C+ 150 C17 WSmd/smtWSON - 6Reel-1_Channel+ 10 v / - 8 V2.1 nCEnhancementAec - Q101Nexfet
IPD25CN10N G


Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK
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Infineon 0
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AUD 0.9808
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                enhancement  
TPD80R900M


800V 6A 790mO@10V,3A 63W N Channel TO-252 MOSFETs ROHS
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UNIGROUP 0
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AUD 0.9811
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BUK7K29-100EX


MOSFET BUK7K29-100E/LFPAK56D/REEL 7
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Nexperia 0
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AUD 0.9813
Multiples of: 1500

29.5 A100 V19.5 mOhmsN - Channel 2.4 V- 55 C+ 175 C68 WSmd/SmtLFPAK56D - 8Cut TapeSi2 Channel20 V38.1 nCEnhancement  
IRFR120TRRPBF


MOSFET N-Chan 100V 7.7 Amp
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Vishay 0
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AUD 0.9814
Multiples of: 3000

         Smd/SmtTO - 252 - 3Cut TapeSi      
STP1N105K3


MOSFET N-Ch 1050V 8Ohm 1.4A SuperMESH3 MOS
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STMicroelectronics 0
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AUD 0.9815
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1.4 A1.05 kV11 Ohmsn - channel 4.5 V  60 Wthrough holeTO - 220Tubesi1 channel 13 nCenhancement supermesh
IPP057N06N3 G


MOSFET N-Ch 60V 80A TO220-3 OptiMOS 3
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Infineon 0
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AUD 0.9815
Multiples of: 1

80 A60 V4.7 mOhmsN - Channel 2 V- 55 C+ 175 C115 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V82 nCEnhancement Optimos
IRFH5302DTRPBF


MOSFET N Trench 30V 29A 2.35V @ 100uA 2.5 mΩ @ 50A,10V PQFN 5x6 RoHS
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.9816
Multiples of: 1

100 A30 V2.5 mOhmsN - Channel20 V   3.6 WSmd/SmtPQFN - 8ReelSi1 Channel20 V26 nC   
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