MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF9520STRLPBF


Trans MOSFET P-CH 100V 6.8A 3-Pin(2+Tab) D2PAK T/R
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Vishay 2327
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between Wed. 16 Sep to Fri. 18 Sep
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AUD 1.4614

Multiples of: 1

                   
SIJ150DP-T1-GE3


MOSFET 45-V D-S MOSFET N-CHANNEL PowerPAK
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Vishay 0
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AUD 0.9822

Multiples of: 1

110 A45 V2.83 mOhmsN - Channel 2.3 V- 55 C+ 150 C65.7 WSmd/SmtPOWERPAK - SO - 8LCut TapeSi1 Channel- 16 v , 20 V46.7 nCEnhancement Trenchfet
IXTP3N60P


IXYS MOSFET 3 Amps 600V
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IXYS 0
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AUD 0.9823

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3 A600 V2.9 Ohmsn - channel 5.5 V- 55 C+ 150 C70 Wthrough holeTO - 220 - 3Tubesi1 channel30 V9.8 nCenhancement polarhv
TK33S10N1Z,LXHQ


MOSFET 125W 1MHz Automotive; AEC-Q101
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Toshiba 0
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AUD 0.9823

Multiples of: 1

33 A100 V9.7 mOhmsN - Channel 4 V-+ 175 C125 WSMD/SMTDPAK - 3Cut Tape , ReelSi1 Channel- 20 V , + 20 V28 nCEnhancementAEC - Q101 
FDMS9409_F085


MOSFET 40V 65A N-Chnl Power Trench MOSFET
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ON Semiconductor 0
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AUD 0.9827

Multiples of: 1

65 A40 V5.6 mOhmsn - channel 2 V- 55 C+ 175 C100 Wsmd/smtPOWER56 - 8Reelsi1 channel+/- 20 V41 nCenhancement powertrench
STL62P3LLH6


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 0.9828

Multiples of: 3000

62 A30 V9 mOhmsp - channel 1 V- 55 C+ 175 C100 Wsmd/smtPowerflat - 8Reelsi1 channel20 V33 nCenhancement stripfet
TK5Q65W,S1Q


Trans MOSFET N-CH 650V 5.2A 3-Pin IPAK
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Toshiba 0
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AUD 0.983

Multiples of: 1

5.2 A650 V1.02 OhmsN - Channel 2.5 V- 55 C+ 150 C60 WThrough HoleTO - 251 - 3TubeSi1 Channel30 V10.5 nCEnhancement Dtmosiv
TPH12008NH,L1Q


Toshiba MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W
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Toshiba 0
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AUD 0.984

Multiples of: 1

44 A80 V10.1 mOhmsn - channel 2 v to 4 V- 55 C+ 150 C48 Wsmd/smtSOP - 8Reelsi1 channel20 V22 nCenhancement  
IRFU4620PBF


MOSFET MOSFT 200V 24A 78mOhm 25nC
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Infineon 0
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AUD 0.9842

Multiples of: 1

24 A200 V78 mOhmsN - Channel  - 55 C+ 175 C144 WThrough HoleIPAKTubeSi1 Channel20 V25 nCEnhancement  
PSMN3R2-30YLC,115


MOSFET N-Ch 30V 3.5mOhms
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NXP 0
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AUD 0.9843

Multiples of: 1

100 A30 V3.5 mOhmsn - channel20 V1.53 V- 55 C+ 175 C92 Wsmd/smtLFPAK - 4Reel   29.5 nC   
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