MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TJ8S06M3L(T6L1,NQ)


Toshiba MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
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Toshiba 0
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AUD 0.8576

Multiples of: 2000

8 A- 60 V104 mOhmsp - channel 2 V + 175 C27 Wsmd/smtTO - 252 - 3Reelsi1 channel- 10 V19 nCenhancement  
H5N5001FM-VB


TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.8576

Multiples of: 1

                   
JCS10N65FT-220MF


MOSFET N Trench 650V 9.5A (Tc) 4.5V @ 250uA 950 mΩ @ 4.75A,10V TO-220MF RoHS
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Jilin 0
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AUD 0.8576

Multiples of: 1

                   
SQ4064EY-T1_GE3


MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
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Vishay 0
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AUD 0.8577

Multiples of: 1

12 A60 V16.5 mOhmsN - Channel 1.5 V- 55 C+ 175 C6.8 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V43 nCEnhancementAec - Q101Trenchfet
SIHU5N80AE-GE3


MOSFET N-CHANNEL 100 V
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Vishay 0
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AUD 0.8577

Multiples of: 1

4.4 A800 V1.35 OhmsN - Channel 4 V- 55 C+ 150 C62.5 WThrough Hole Cut Tape , ReelSi1 Channel- 30 V , + 30 V11 nCEnhancement  
10N70L-TF2-T


MOSFET N Trench 700V 10A (Tc) 4V @ 250uA 1.2 Ω @ 5A,10V TO-220F (TO-220IS) RoHS
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Unisonic 0
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AUD 0.858

Multiples of: 1

                   
WMK048NV6HG4


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 0
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AUD 0.858

Multiples of: 1

                   
SE10080A


MOSFET N Trench 100V 80A 4V @ 250uA 13 mΩ @ 40A,10V TO-220 RoHS
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SINO-IC 0
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AUD 0.858

Multiples of: 1

                   
2SK2094TL


MOSFET POWER MOSFET SURF MOUNT
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ROHM 0
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AUD 0.8581

Multiples of: 2500

2 A60 V400 mOhmsn - channel  - 55 C+ 150 C10 Wsmd/smtCPT3Reelsi1 channel20 V enhancement  
IPD60R600E6BTMA1


Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.8582

Multiples of: 695

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