MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SW7N80


MOSFET N Trench 800V 7A (Tc) 4.5V @ 250uA 1.8 Ω @ 3.5A,10V TO-220F RoHS
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Sam&wing 0
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AUD 0.8541

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FHF10N60A


600V 10A 50W 850mO@10V,5A N Channel TO-220F-3 MOSFETs ROHS
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FeiHong 0
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AUD 0.8541

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JCS11N65FC TO-220MF


MOSFET TO-220MF RoHS
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Jilin 0
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AUD 0.8541

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NVTFS5811NLWFTWG


MOSFET Pwr MOSFET 40V 40A 6.7mOhm SGL N-CH
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ON Semiconductor 0
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AUD 0.8542

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   n - channel     smd/smtWDFN - 8Reelsi1 channel   aec - q101 
IRLR8113PBF


MOSFET MOSFT 30V 94A 6mOhm 22nC Qg Log Lvl
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Infineon 0
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AUD 0.8543

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94 A30 V7.4 mOhmsn - channel20 V   89 Wsmd/smtDPAK - 3Tube   22 nC   
IRFR3707TRPBF


MOSFET 30V 1 N-CH HEXFET 13mOhms 19nC
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Infineon 0
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AUD 0.8543

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61 A30 V17.5 mOhmsn - channel20 V - 55 C+ 175 C87 Wsmd/smtDPAK - 3Reel   19 nCenhancement  
IRFU4105PBF


MOSFET MOSFT 55V 25A 45mOhm 22.7nC
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Infineon 0
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AUD 0.8543

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25 A55 V45 mOhmsn - channel20 V   48 Wthrough holeIPAK - 3Tube   22.7 nC   
SI5903DC-T1-E3


MOSFET 20V 2.9A 2.1W
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AUD 0.8543

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2.1 A- 20 V155 mOhmsP - Channel12 V - 55 C+ 150 C1.1 WSmd/SmtCHIP - FET - 8Reel    Enhancement Trenchfet
SI4500BDY-T1-E3


MOSFET 20V 74.5A 2.5W
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AUD 0.8543

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6.6 A20 V20 mOhms , 60 mOhmsn - channel, p - channel12 V - 55 C+ 150 C1.3 Wsmd/smtSOIC - 8 NarrowReel    enhancement trenchfet
SI9926BDY-T1-E3


MOSFET 20 Volt 8.2 Amp 2.0W
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Vishay 0
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AUD 0.8543

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6.2 A20 V20 mOhmsn - channel12 V - 55 C+ 150 C1.14 Wsmd/smtSO - 8Reel    enhancement trenchfet
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