MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIS5712DN-T1-GE3


MOSFETs N-Channel 150 V (D-S) MOSFET PowerPAK 1212-8, 55.5 mohm a. 10V 62.4 mohm a. 7.5V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 0.851
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18 A150 V55.5 mOhmsN - Channel 4 V- 55 C+ 150 C39.1 WSMD/SMTPOWERPAK 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V7.5 nCEnhancement  
TPCP8203(TE85L,F)


Trans MOSFET N-CH 40V 4.7A 8-Pin PS T/R
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Toshiba 0
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AUD 0.8511
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4.7 A  n    1.48 Wsurface mount Tape And Reel    enhancement  
AOD240


Transistor: N-MOSFET; unipolar; 40V; 55A; 150W; TO252
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Alpha & Omega 0
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AUD 0.8511
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SPD07N60C3


MOSFET N Trench 650V 7.3A (Tc) 3.9V @ 350uA 600 mΩ @ 4.6A,10V TO-252-2 (DPAK) RoHS
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Infineon 0
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AUD 0.8512
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7.3 A600 V600 mOhmsn - channel  - 55 C+ 150 C83 Wsmd/smtTO - 252 - 3Cut Tapesi1 channel20 V enhancement coolmos
SIR164ADP-T1-GE3


MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Vishay 0
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AUD 0.8512
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40 A30 V2.2 mOhmsN - Channel 1.1 V- 55 C+ 150 C62.5 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel- 16 v , 20 V77 nCEnhancement Trenchfet, Powerpak
HUF76633P3


100V 45A 32mO@10V,45A N Channel TO-220AB-3 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.8514
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STP80N70F4


MOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package
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STMicroelectronics 0
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AUD 0.8515
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85 A68 V8.2 mOhmsn - channel 2 V- 55 C+ 175 C150 Wthrough holeTO - 220 - 3 si1 channel20 V90 nCenhancement  
SPP80N03S2L


MOSFET TO-220 RoHS
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VBsemi Elec 0
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AUD 0.8518
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DMP1005UFDF-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 0
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AUD 0.8519
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26 A12 V5.8 mOhmsP - Channel 1 V- 55 C+ 150 C2.1 WSmd/SmtU - DFN2020 - 6Cut TapeSi1 Channel8 V47 nCEnhancement  
CSD75211W1723


MOSFET Dual P-Channel Nex FET Power MOSFET
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Texas Instruments 0
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AUD 0.8522
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4.5 A20 V39 mOhmsp - channel  - 55 C+ 150 C1.5 Wsmd/smtDSBGA - 12Reelsi2 channel8 V   nexfet
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