MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LSGC04R029


MOSFET TO-220 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Lonten Semiconductor 0
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AUD 0.8594

Multiples of: 1

                   
CS7N80FA9


800V 7A 1.8O@10V,3.5A 48W N Channel TO-220F-3 MOSFETs ROHS
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Huajing 0
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AUD 0.8594

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AON6926


MOSF 2N-CH 30V 44A50A DFN5X6B
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Alpha & Omega 0
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AUD 0.8594

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           -       
TJ60S04M3L(T6L1,NQ


MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063
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Toshiba 0
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AUD 0.8594

Multiples of: 2000

60 A40 V6.3 mOhmsP - Channel    90 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel     
SQ4050EY-T1_GE3


MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
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Vishay 0
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AUD 0.8596

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19 A40 V6.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C6 WSMD/SMTSOIC - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V34 nCEnhancementAEC - Q101TrenchFET
DMHC4035LSDQ-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 0
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AUD 0.8597

Multiples of: 2500

4.5 A , 3.7 A40 V26 mOhms , 49 mOhmsN - Channel, P - Channel 1 v , 3 V- 55 C+ 150 C1.5 WSmd/SmtSO - 8Cut TapeSi4 Channel20 V12.5 nC , 11.1 nCEnhancementAec - Q101 
BSC014N03LSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
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Infineon 0
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AUD 0.8597

Multiples of: 5000

            optimos 3      
BSC014N03MSGATMA1


Transistor: N-MOSFET; unipolar; 30V; 100A; 139W; PG-TDSON-8
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Infineon 0
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AUD 0.8597

Multiples of: 5000

            optimos 3      
SIZ256DT-T1-GE3


Mosfet Array 2 N-Channel (Dual) 70V 11.5A (Ta), 31.8A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)
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Vishay 0
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AUD 0.8598

Multiples of: 1

          8 - PowerwdfnDigi - Reel®       
FDMS7670AS


N-Channel 30 V 22A (Ta), 42A (Tc) 2.5W (Ta), 65W (Tc) Surface Mount 8-PQFN (5x6)
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ON Semiconductor 0
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AUD 0.8599

Multiples of: 1

42 A30 V3 mOhmsn - channel  - 55 C+ 150 C65 Wsmd/smtPOWER - 56Reelsi1 channel20 V   powertrench syncfet
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