MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC072N08NS5ATMA1


Transistor: N-MOSFET; unipolar; 80V; 74A; 69W; PG-TDSON-8
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 3323
Ships to you
between Wed. 09 Sep to Tue. 15 Sep
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AUD 1.0993

Multiples of: 1

            Optimos 5      
IRF640NSHR


Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.8621

Multiples of: 50

                enhancement  
XPN7R104NC,L1XHQ


MOSFET 65W 1MHz Automotive; AEC-Q101
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 0.8623

Multiples of: 1

20 A40 V7.1 mOhmsN - Channel 2.5 V-+ 175 C65 WSMD/SMTTSON - ADVANCE - 8Cut Tape , ReelSi1 Channel- 20 V , + 20 V21 nCEnhancementAEC - Q101 
IRFR825PBF


Transistor: N-MOSFET; unipolar; 500V; 6A; 119W; DPAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 0.8625

Multiples of: 1

6 A500 V1.05 OhmsN - Channel  - 55 C+ 150 C119 WSmd/SmtDPAK - 3Tube   34 nC   
RSS090N03FU6TB


ROHM Semiconductor MOSFET 30V 9A N CHANNEL
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ROHM 0
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AUD 0.8627

Multiples of: 1

9 A30 V16 mOhmsn - channel20 V - 55 C+ 150 C2 Wsmd/smtSOP - 8Reelsi1 channel20 V enhancement  
BR13N50


MOSFET N Trench 500V 13A (Tc) 4V @ 250uA 480 mΩ @ 6.5A,10V TO-220 RoHS
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Blue Rocket 0
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AUD 0.8627

Multiples of: 1

                   
IPP100N08N3 G


MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3
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Infineon 0
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AUD 0.8631

Multiples of: 1

70 A80 V8.4 mOhmsN - Channel 2 V- 55 C+ 175 C100 WThrough HoleTO - 220TubeSi1 Channel20 V35 nCEnhancement Optimos
TK80S06K3L-VB


60V 110A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.8631

Multiples of: 1

                   
IXTP2R4N50P


MOSFET 2.4 Amps 500 V 3.5 Ohm Rds
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IXYS 0
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AUD 0.8633

Multiples of: 1

2.4 A500 V3.75 Ohmsn - channel  - 55 C+ 150 C55 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
IRFD010PBF


N-Channel 50 V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP
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Vishay 0
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AUD 0.8634

Multiples of: 100

1.7 A50 V200 mOhmsn - channel  - 55 C+ 150 C1 Wthrough holeDIP - 4Tube   8.8 nC   
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