MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSG017N045AT


MOSFET DFN5×6 RoHS
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AUD 0.7614

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CRSM043N10N4


DFN(5x6) MOSFETs ROHS
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AUD 0.7614

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VN10KN3-G-P013


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 0
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AUD 0.7614

Multiples of: 2000

310 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Reel 1 Channel30 V Enhancement  
AOT9N50


Transistor: N-MOSFET; unipolar; 500V; 6A; TO220
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Alpha & Omega 0
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AUD 0.7614

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FDD8878


N-Channel 30 V 11A (Ta), 40A (Tc) 40W (Tc) Surface Mount TO-252AA
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ON Semiconductor 0
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AUD 0.7614

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40 A30 V15 mOhmsn - channel  - 55 C+ 175 C40 Wsmd/smtTO - 252ABReelsi1 channel20 V enhancement powertrench
TPCA8128,LQ(CM


Toshiba MOSFET P-CH FET -30V 3.7 mOhm 45W
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AUD 0.7615

Multiples of: 37

- 34 A- 30 V3.7 mOhmsp - channel 800 mV- 55 C+ 150 C45 Wsmd/smtSOP - 8Reelsi1 channel- 10 V115 nCenhancement  
IPB136N08N3 G


MOSFET N-Channel MOSFET 20-200V
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Infineon 0
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AUD 0.7616

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45 A80 V13.6 mOhmsn - channel  - 55 C+ 175 C79 Wsmd/smtTO - 263Reelsi1 channel20 V enhancement optimos
SIS110DN-T1-GE3


MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
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AUD 0.7618

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14.2 A100 V54 mOhmsN - Channel 2 V- 55 C+ 150 C24 WSMD/SMTPOWERPAK - 1212 - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V13 nCEnhancement TrenchFET, PowerPAK
DMPH6023SK3-13


MOSFET MOSFETBVDSS: 41V-60V
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Diodes Incorporated 0
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AUD 0.7618

Multiples of: 2500

35 A60 V33 mOhmsP - Channel 3 V- 55 C+ 175 C3.2 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V53.1 nCEnhancement  
RSD050N10TL-VB


TO-252 MOSFETs ROHS
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AUD 0.762

Multiples of: 1

                   
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