MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
LND150N3-G-P002


Microchip Technology MOSFET DepletionMode MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.7606

Multiples of: 1

30 mA500 V1000 OhmsN - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92 - 3ReelSi1 Channel20 V Depletion  
LND150N3-G-P013


Microchip Technology MOSFET DepletionMode MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 0.7606

Multiples of: 1

30 mA500 V1000 OhmsN - Channel  - 55 C+ 150 C740 mWThrough HoleTO - 92 - 3Bulk 1 Channel20 V Depletion  
NCEP092N10AS


100V 14A 8.4mΩ@10V,14A 3.5W 1.7V@250uA N Channel SOP-8 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 0
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AUD 0.7608

Multiples of: 1

                   
FDMC8030


MOSFET FPS
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ON Semiconductor 0
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AUD 0.7611

Multiples of: 1

12 A40 V10 mOhmsN - Channel  - 55 C+ 150 C800 mWSmd/SmtPOWER 33ReelSi2 Channel12 V12 nC , 21 nC  Powertrench
SPD08P06PGXT


MOSFET P-Ch -60V -8.8A DPAK-2
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Infineon 0
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AUD 0.7611

Multiples of: 1

8.83 A60 V230 mOhmsP - Channel 4 V- 55 C+ 175 C42 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V- 13 nCEnhancementAec - Q101 
BSC024NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.7612

Multiples of: 1

100 A25 V2.4 mOhmsN - Channel 1.2 V- 55 C+ 150 C48 WSmd/SmtTDSON - 8ReelSi1 Channel10 V23 nCEnhancement Optimos
IRF7452TRPBF


Transistor: N-MOSFET; unipolar; 100V; 4.5A; 2.5W; SO8
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.7612

Multiples of: 4000

4.5 A100 V60 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel30 V33 nC   
PSMN040-100MSE


MOSFET, N-CH, 100V, 30A, LFPAK33
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Nexperia 0
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AUD 0.7612

Multiples of: 1

   N Channel               
CSD25304W1015T


P-Channel 20 V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
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Texas Instruments 0
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AUD 0.7612

Multiples of: 1

- 3 A- 20 V92 mOhmsP - channel8 V- 0.8 V- 55 C+ 150 C1.5 WSmd/smtDSBGA - 6ReelSi1 Channel8 V3.3 nC  Nexfet
VN10KN3-G-P013


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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Microchip 0
6 to 16 Weeks Calender.png

AUD 0.7614

Multiples of: 2000

310 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Reel 1 Channel30 V Enhancement  
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