MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE7190A


MOSFET N Trench 71V 90A 4V @ 250uA 50 mΩ @ 20A,10V TO-220 (TO-220-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power 0
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AUD 0.7598
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KNH3306A


MOSFET TO-3P RoHS
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KIA 0
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AUD 0.7599
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APM4330KC


MOSFET SO-8 RoHS
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VBsemi Elec 0
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AUD 0.7599
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PHD78NQ03L


MOSFET TO-252 RoHS
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VBsemi Elec 0
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AUD 0.7599
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NTTFS5820NLTAG


MOSFET Single N-CH 60V 11A, 37A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 0.76
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37 A60 V11.5 mOhmsn - channel 1.5 V- 55 C+ 150 C33 Wsmd/smtWDFN - 8Cut Tapesi1 channel10 V28 nCenhancement  
SiHU5N50D-GE3


MOSFET 500V 5A 1.5Ohm @ 10V
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Vishay 0
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AUD 0.76
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5.3 A500 V1.5 OhmsN - Channel 5 V- 55 C+ 150 C104 WThrough HoleTO - 251BulkSi1 Channel30 V10 nCEnhancement  
BSO207P H


MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P
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Infineon 0
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AUD 0.76
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5.7 A20 V32 mOhms , 32 mOhmsp - channel 1.2 V- 55 C+ 150 C2 Wsmd/smtSO - 8Reelsi2 channel12 V- 16 nC , - 16 nCenhancement optimos
IRFR13N20DPBF


Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; DPAK
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Infineon 0
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AUD 0.7602
Multiples of: 20

   N - Channel  - 55 C+ 175 C Smd/SmtDPAKTube       
IRL530STRR-VB


- MOSFETs ROHS
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AUD 0.7604
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SQS405EN-T1_GE3


MOSFET P-Channel 12V AEC-Q101 Qualified
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Vishay 0
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AUD 0.7605
Multiples of: 3000

16 A- 12 V14 mOhmsp - channel 1 V- 55 C+ 175 C39 Wsmd/smtPOWERPAK - 1212 - 8Reelsi1 channel8 V75 nCenhancementaec - q101trenchfet
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