MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TSG12N06AT


MOSFET DFN5×6 RoHS
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AUD 0.5372

Multiples of: 1

                   
KNF4665A


MOSFET N Trench 650V 7.5A (Tc) 4V @ 250uA 1.4 Ω @ 3.75A,10V TO-220F (TO-220IS) RoHS
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KIA 0
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AUD 0.5372

Multiples of: 1

                   
G90N04


MOSFET N Trench 45V 90A (Tc) 2.2V @ 250uA 6 mΩ @ 10A,10V TO-252 RoHS
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AUD 0.5372

Multiples of: 1

                   
TPN6R303NC,LQ


Toshiba MOSFET N-Ch 30V 1370pF 24nC 6.3mOhm 43A 19W
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Toshiba 0
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AUD 0.5373

Multiples of: 3000

43 A30 V5.2 mOhmsn - channel20 V1.3 v to 2.3 V- 55 C+ 150 C19 Wsmd/smtTSON - 8Reelsi1 channel20 V24 nCenhancement  
IRF9520NPBF


Transistor: P-MOSFET; unipolar; -100V; -6.8A; 48W; TO220AB
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Infineon 0
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AUD 0.5373

Multiples of: 50

   P Channel      TO - 220 - 3        
BUK96180-100A,118


NXP Semiconductors MOSFET TAPE13 PWR-MOS
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Nexperia 0
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AUD 0.5373

Multiples of: 1

11 A100 V173 mOhmsn - channel15 V - 55 C+ 175 C54 Wsmd/smtSOT - 404 - 3Reelsi1 channel15 V enhancement  
FQD10N20LTM


Fairchild Semiconductor MOSFET 200V N-Ch QFET Logic Level
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ON Semiconductor 0
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AUD 0.5373

Multiples of: 2500

7.6 A200 V290 mOhmsn - channel20 V - 55 C+ 150 C2.5 Wsmd/smtDPAK - 3Tube    enhancement  
PTP11N40


TO-220 MOSFETs ROHS
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AUD 0.5374

Multiples of: 1

                   
DMP3050LVTQ-7


MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 3K
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Diodes Incorporated 0
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AUD 0.5374

Multiples of: 1

4.5 A30 V50 mOhmsP - Channel 2 V- 55 C+ 150 C1.6 WSMD/SMT Reel , Cut TapeSi1 Channel- 25 V , + 25 V5.1 nCEnhancement  
VN10KN3-G-P002


Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
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AUD 0.5375

Multiples of: 1

310 mA60 V7.5 OhmsN - Channel  - 55 C+ 150 C1 WThrough HoleTO - 92 - 3Reel 1 Channel30 V Enhancement  
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