MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SL8N65CD


TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

SLKORMICRO 0
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AUD 0.5387

Multiples of: 1

                   
TK110P10PL,RQ


MOSFET DPAK-OS PD=75W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 0.5392

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40 A100 V16 mOhmsN - Channel 2.5 V- 55 C+ 175 C75 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V33 nCEnhancement U - Mosix - H
DMP1081UCB4-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 0
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AUD 0.5392

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         Smd/SmtU - WLB1010 - 4Cut TapeSi      
AP9971GJ


60V 35A 32mO@10V,35A N Channel TO-251 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5393

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SIHD3N50DT4-GE3


N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount TO-252AA
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Vishay 0
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AUD 0.5396

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3 A500 V3.2 OhmsN - Channel 3 V- 55 C+ 150 C69 WSmd/SmtTO - 252 - 3  1 Channel30 V12 nCEnhancement  
SiHU3N50D-GE3


MOSFET 500V 3A 3.2Ohm @ 10V
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Vishay 0
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AUD 0.5396

Multiples of: 3000

3 A500 V3.2 Ohmsn - channel 5 V- 55 C+ 150 C69 Wthrough holeTO - 251Bulksi1 channel30 V6 nCenhancement  
IRLR7807ZTRPBF


International Rectifier MOSFET 30V 1 N-CH HEXFET 13.8mOhms 7nC
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Infineon 0
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AUD 0.54

Multiples of: 2000

43 A30 V13.8 mOhmsN - Channel20 V2.25 V- 55 C+ 175 C40 WSmd/SmtDPAK - 3ReelSi1 Channel20 V7 nCEnhancement  
2SK3488-TD-E


GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
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ON Semiconductor 0
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AUD 0.54

Multiples of: 1000

                   
FDMA1430JP


MOSFET P-Chan -30V -2.9A
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ON Semiconductor 0
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AUD 0.54

Multiples of: 1

2.9 A30 V90 mOhmsp - channel 1 V- 55 C+ 150 C1.5 Wsmd/smtMICRO - FET 2 x 2Reelsi     powertrench
2SJ182S


60V 30A 4W 61mO@10V,5A P Channel TO-252-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

VBsemi Elec 0
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AUD 0.5402

Multiples of: 1

                   
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