MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
XP202A0003MR-G


MOSFET Power MOSFET -30V 3A P-Type SOT-23
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Torex Semiconductor 0
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AUD 0.5359
Multiples of: 1

3 A30 V45 mOhmsP - Channel - 2.6 V- 55 C+ 150 C1 WSmd/SmtSOT - 23Cut TapeSi1 Channel20 V10 nCEnhancement  
ISZ810P06LMATMA1


MOSFETs N
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Infineon 0
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AUD 0.5359
Multiples of: 1

19.5 A60 V81 mOhmsP - Channel 2 V- 55 C+ 175 C83 WSMD/SMTTSDSON - 8Reel , Cut Tape 1 Channel- 20 V , + 20 V16 nCEnhancement  
DMG4468LFG-7


Diodes Incorporated MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.5359
Multiples of: 3000

7.62 A30 V23.5 mOhmsn - channel 1 V- 55 C+ 150 C1.42 Wsmd/smtV - DFN - 3020 - 8Reelsi1 channel20 V18.85 nCenhancement  
NCEP40T11G


MOSFET N Trench 40V 110A (Tc) 2.2V @ 250uA 2.8 mΩ @ 55A,10V DFN 5x6-8L RoHS
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NCE Power 0
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AUD 0.536
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IRF7379TRPBF


Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.536
Multiples of: 4000

5.8 A30 V75 mOhmsN And P - Channel    2.5 WSmd/SmtSOIC - 8ReelSi2 Channel20 V16.7 nC   
SIS436DN-T1-GE3


MOSFET 25V 16A 27.7W 10.5mohm @ 10V
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Vishay 0
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AUD 0.536
Multiples of: 3000

   n - channel  - 55 C+ 150 C smd/smtPOWERPAK 1212 - 8Reelsi     trenchfet, powerpak
FDD3N50NZTM


650V 4.5A 1.8O@10V,4.5A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.5361
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TK30A06N1,S4X


MOSFET MOSFET NCh11.5ohm VGS10V 10uA VDS60V
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Toshiba 0
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AUD 0.5362
Multiples of: 1

30 A60 V12.2 mOhmsN - Channel 4 V- 55 C+ 150 C25 WThrough HoleTO - 220FP - 3 Si1 Channel20 V16 nCEnhancement  
NCE65T540I


MOSFET N Trench 650V 8A (Tc) 4V @ 250uA 540 mΩ @ 4A,10V TO-251 (I-PAK) RoHS
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NCE Power 0
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AUD 0.5363
Multiples of: 1

                   
DMC1029UFDB-7


MOSFET 20V Comp Pair Enh 8Vgs 914pF 10.5nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.5363
Multiples of: 1

         Smd/SmtDFN1612 - 6Cut TapeSi      
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