MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD75208W1015


Mosfet Array 2 P-Channel (Dual) Common Source 20V 1.6A 750mW Surface Mount 6-DSBGA (1x1.5)
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Texas Instruments 4
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AUD 0.3713
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1.6 A20 V68 mOhms , 108 mOhmsP - Channel 500 mV- 55 C+ 150 C750 mWSmd/SmtDSBGA - 6ReelSi2 Channel- 4.5 V2.5 nC ,Enhancement Nexfet
IRLMS1902TRPBF


Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
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Infineon 0
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AUD 0.2555
Multiples of: 3000

3.2 A20 V170 mOhmsN - Channel 700 mV- 55 C+ 150 C1.7 WSmd/SmtTSOP - 6ReelSi1 Channel12 V4.7 nC   
CJQ4800


SOIC-8 MOSFETs ROHS
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Changjing Electronics Technology 0
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AUD 0.2556
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QM2544N5


DFN-23 MOSFETs ROHS
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uPI Semiconductor 0
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AUD 0.2557
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IRLR3915PBF-HXY


60V 50A 11m 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 0
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AUD 0.2557
Multiples of: 5

                   
BUK9Y27-40B,115


MOSFET N-CHANNEL TRENCHMOS LOGIC LEVEL FET
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Nexperia 0
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AUD 0.2558
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34 A40 V22 mOhmsN - Channel     Smd/SmtLFPAK56 - 5Cut TapeSi1 Channel     
LND4N65


MOSFET N Trench 650V 4A 4V @ 250uA 2.7 Ω @ 2A,10V TO-220F RoHS
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Lonten Semiconductor 0
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AUD 0.2558
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KIA4N60P


MOSFET N Trench 600V 4A (Tc) 4V @ 250uA 2.7 Ω @ 2A,10V TO-220 (TO-220-3) RoHS
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KIA 0
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AUD 0.2558
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TSM126CX RFG


MOSFET 600V 30mA N-Channel Depletion Mode
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Taiwan Semiconductor 0
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AUD 0.2559
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30 mA600 V400 OhmsN - Channel 2.7 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V1.18 nCDepletion  
PMV65XPEA


MOSFET, P-CH, -20V, -2.8A, TO236AB
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Nexperia 0
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AUD 0.256
Multiples of: 5

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