MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP3036SSS-13


MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss
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Diodes Incorporated 29100
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AUD 0.2461
Multiples of: 5

19.5 A30 V16 mOhmsP - Channel 1 V- 55 C+ 150 C1.9 WSmd/SmtSO - 8Cut TapeSi1 Channel25 V16.5 nCEnhancement  
SRT10L45SFCT


TO-220F MOSFETs ROHS
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YFW Electronics 97
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AUD 0.3074
Multiples of: 5

                   
ZVP4525E6TA


P-Channel 250 V 197mA (Ta) 1.1W (Ta) Surface Mount SOT-23-6
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Diodes Incorporated 1
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AUD 1.4073
Multiples of: 1

197 mA250 V14 OhmsP - channel 2 V- 55 C+ 150 C1.1 WSmd/smtSOT - 23 - 6ReelSi1 Channel40 V2.45 nCEnhancement  
DMC2020USD-13


MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.255
Multiples of: 2500

8.5 A , 6.8 A20 V20 mOhms , 33 mOhmsN - Channel, P - Channel 500 mV , 400 mV- 55 C+ 150 C1.8 WSmd/SmtSOIC - 8Cut TapeSi2 Channel4.5 V11.6 nC , 8 nCEnhancement  
JMSL1018AP


SOP-8L MOSFETs ROHS
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JieJie 0
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AUD 0.2553
Multiples of: 5

                   
KIA730HP


MOSFET N Trench 400V 6A (Tc) 4V @ 250uA 1 Ω @ 3A,10V TO-220 (TO-220-3) RoHS
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KIA 0
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AUD 0.2553
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FQD7N10LTM


Transistor: N-MOSFET; unipolar; 100V; 3.67A; 25W; DPAK
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ON Semiconductor 0
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AUD 0.2553
Multiples of: 1

            qfet®      
SI1555DL-T1


20V 1V@100uA 1PCSN-Channel&1PCSP-Channel -55℃~+150℃@(Tj) SC-70-6 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.2554
Multiples of: 1

                   
IRF7601PBF


International Rectifier MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.2554
Multiples of: 1

5.7 A20 V35 mOhmsN - Channel 0.7 V- 55 C+ 175 C1.8 WSmd/SmtMICRO - 8TubeSi1 Channel12 V14 nCEnhancement  
IRLMS1902TRPBF


Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6
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Infineon 0
6 to 16 Weeks Calender.png

AUD 0.2555
Multiples of: 3000

3.2 A20 V170 mOhmsN - Channel 700 mV- 55 C+ 150 C1.7 WSmd/SmtTSOP - 6ReelSi1 Channel12 V4.7 nC   
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