MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PA910BD


TO-252-2 MOSFETs ROHS
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NIKO 0
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AUD 0.2533
Multiples of: 1

                   
RSR020N06TL


60V 4A 85mO@10V,4A 1.66W N Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.2533
Multiples of: 5

                   
HYG800P10LR1S


SOP-8L MOSFETs ROHS
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HuaYi 0
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AUD 0.2533
Multiples of: 5

                   
BSS84.215


Transistor: P-MOSFET; unipolar; -50V; -130mA; 250mW; SOT23
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Nexperia 0
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AUD 0.2533
Multiples of: 1

                   
G16P03-SOP-8


MOSFET P Trench 30V 16A 3V @ 250uA 15 mΩ @ 10A,10V SOP-8 RoHS
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GOFORD 0
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AUD 0.2536
Multiples of: 1

                   
SIA477EDJ-T1-GE3


Vishay Semiconductors MOSFET 12V 14mOhm4.5V 12A P-Ch
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Vishay 0
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AUD 0.2537
Multiples of: 1

- 12 A- 12 V25 mOhmsp - channel8 V- 1 V- 55 C+ 150 C19 Wsmd/smtPOWERPAK - SC - 70 - 6Reelsi1 channel8 V58 nCenhancement trenchfet, powerpak
ZXMN3A01FTA


N-Channel 30 V 1.8A (Ta) 625mW (Ta) Surface Mount SOT-23-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 0
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AUD 0.2537
Multiples of: 3000

2 A30 V120 mOhmsN - Channel 1 V- 55 C+ 150 C625 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3.5 nCEnhancement  
SI8481DB-T1-E1


MOSFET -20V Vds 8V Vgs MICRO FOOT
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Vishay 0
6 to 16 Weeks Calender.png

AUD 0.2537
Multiples of: 1

9.7 A20 V17 mOhmsP - Channel 900 mV- 55 C+ 150 C2.8 WSmd/SmtMICRO - FOOT - 4Cut TapeSi1 Channel8 V81 nCEnhancement  
ST3422AS23RG-VB


SOT-23 MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.2539
Multiples of: 5

                   
SM3319NSQAC-TRG


MOSFET N Trench 30V 7A 2.5V @ 250uA 21 mΩ @ 8A,10V DFN3x3A-8_EP RoHS
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Sinopower 0
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AUD 0.2541
Multiples of: 1

                   
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