MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
UTT18P10L-TN3-R


MOSFET P Trench 100V 18A 2.5V @ 250uA 200 mΩ @ 18A,10V TO-252-2 (DPAK) RoHS
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Unisonic 2245
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AUD 0.2912
Multiples of: 5

                   
IRFHS8342TRPBF


Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
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Infineon 0
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AUD 0.2459
Multiples of: 4000

19 A30 V25 mOhmsN - Channel 2.35 V- 55 C+ 150 C2.1 WSmd/SmtPQFN - 6ReelSi1 Channel20 V4.2 nCEnhancement  
IRLML5203GTRPBF


MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl
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Infineon 0
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AUD 0.246
Multiples of: 6000

3 A30 V165 mOhmsp - channel    1.25 Wsmd/smtSOT - 23Reelsi1 channel20 V9.5 nC   
BSR302N L6327


MOSFET OptiMOS 2 Sm-Signal Transistor 30V 3.7A
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Infineon 0
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AUD 0.246
Multiples of: 1

3.7 A30 V23 mOhmsN - Channel 1.2 V- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSC - 59 - 3ReelSi1 Channel10 V4.4 nCEnhancement  
SQ2310CES-T1_GE3


MOSFETs Automotive N-Channel 20 V (D-S) 175C MOSFET SOT-23, 30 mohm a. 4.5V
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Vishay 0
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AUD 0.2462
Multiples of: 1

6 A20 V30 mOhmsN - Channel 600 mV- 55 C+ 175 C2 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 8 V , + 8 V4.95 nCEnhancement  
TPS1120-HXY


20V 3A 85m 2 P-Channel SOP-8 MOSFETs ROHS
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HXY MOS 0
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AUD 0.2462
Multiples of: 5

                   
LSG65R930GT


MOSFET N Channel 650V 4A(Tc) 4.5V @ 250uA 930mO @ 2A,10V TO-252 RoHS
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Lonten Semiconductor 0
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AUD 0.2462
Multiples of: 1

                   
SIF4N70F


TO-252 MOSFETs ROHS
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SI 0
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AUD 0.2462
Multiples of: 5

                   
AP50G03GD


TO-252-4 MOSFETs ROHS
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APM Microelectronics 0
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AUD 0.2463
Multiples of: 5

                   
LNN04R050


MOSFET N Channel 40V 80A(Tc) 2V @ 250uA 6.2mO @ 10A,4.5V DFN5x6 RoHS
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Lonten Semiconductor 0
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AUD 0.2463
Multiples of: 1

                   
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