MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMC67D8UFDBQ-7


MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 3K
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Diodes Incorporated 485
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AUD 0.3807
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UF630G-TN3-R


MOSFET N Trench 200V 9A 4V @ 250uA 400 mΩ @ 5A,10V TO-252-2 (DPAK) RoHS
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Unisonic 0
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AUD 0.2476
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PMPB14R7EPX


P-Channel 30V 8A (Ta) 1.9W (Ta), 12.5W (Tc) Surface Mount DFN2020M-6
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Nexperia 0
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AUD 0.2479
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          6 - UDFN EXPOSED PADDigi - Reel®Mosfet (Metal Oxide)      
CS2N65F


MOSFET TO-220F RoHS
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Convert Semiconductor 0
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AUD 0.2479
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KIA100N03AD


MOSFET N Trench 30V 90A 2.5V @ 250uA 4 mO @ 24A,10V TO-252-2 (DPAK) RoHS
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KIA 0
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AUD 0.2481
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PMN30XPEX


MOSFET PMN30XPESOT457SC-74
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Nexperia 0
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AUD 0.2481
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7 A20 V34 mOhmsP - Channel 750 mV- 55 C+ 150 C1.4 WSmd/SmtTSOP - 6Cut TapeSi1 Channel12 V11 nCEnhancement  
BSL205N H6327


MOSFET SMALL SIGNAL+P-CH
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Infineon 0
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AUD 0.2482
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2.5 A20 V39 mOhms , 39 mOhmsN - Channel 600 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtTSOP - 6Cut TapeSi2 Channel12 V3.2 nC , 3.2 nCEnhancement  
NTD20P06L-HXY


60V 10A 125m 1PCSPChannel TO-252-2L MOSFETs ROHS
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HXY MOS 0
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AUD 0.2482
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FDMC510P-HXY


20V 48A 7.5mΩ 1PCSPChannel DFN-8L(3x3) MOSFETs ROHS
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HXY MOS 0
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AUD 0.2482
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BUK9214-30A-HXY


30V 60A 7m 1PCSNChannel TO-252-2L MOSFETs ROHS
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HXY MOS 0
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AUD 0.2482
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