MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
P06P03LVG-VB


- MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.249
Multiples of: 5

                   
NTMFS4927NT1G


N-Channel 30 V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ON Semiconductor 0
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AUD 0.2493
Multiples of: 1500

38 A30 V13.5 mOhmsn - channel 1.6 V- 55 C+ 150 C20.8 Wsmd/smtSO - 8FLReelsi1 channel20 V8 nC   
8680A


MOSFET N Trench 80V 92A (Tc) 4V @ 250uA 7.8 mΩ @ 40A,10V TO-220 (TO-220-3) RoHS
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GOFORD 0
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AUD 0.2494
Multiples of: 5

                   
DMN2005LP4K-7B


MOSFET
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Diodes Incorporated 0
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AUD 0.2494
Multiples of: 5

                   
NTLJD3119CTAG


MOSFET COMP 2X2 20V 3.8A 100mOhm
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ON Semiconductor 0
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AUD 0.2495
Multiples of: 1956

3.8 A20 V100 mOhmsn - channel, p - channel8 V - 55 C+ 150 C710 mWsmd/smtWDFN - 6Reel    enhancement  
PMV55ENEA


MOSFET N Trench 60V 3.1A 2.7V @ 250uA 60 mΩ @ 3.1A,10V TO-236AB RoHS
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Nexperia 0
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AUD 0.2496
Multiples of: 1

   n channel               
PMDPB56XNEAX


MOSFET PMDPB56XNEA/HUSON6/REEL 7" Q1/
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Nexperia 0
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AUD 0.2496
Multiples of: 3000

3.1 A , 31 A30 V55 mOhms , 55 mOhmsN - Channel 750 mV- 55 C+ 150 C8.33 WSmd/SmtDFN2020D - 6ReelSi2 Channel12 V5 nC , 5 nCEnhancement  
G400P06S


60V 6A 1.7W 33m 3V@250uA 1PCSPChannel SOP-8 MOSFETs ROHS
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GOFORD 0
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AUD 0.2496
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PD616BA


MOSFET N Trench 30V 55A 3V @ 250uA 7 mΩ @ 20A,10V TO-252 RoHS
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NIKO 0
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AUD 0.2499
Multiples of: 5

                   
2N7002


Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23
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NTE 0
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AUD 0.25
Multiples of: 1

                   
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