MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CSD25481F4T


P-Channel 20 V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR
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Texas Instruments 116
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AUD 0.3456
Multiples of: 5

- 2.5 A- 20 V105 mOhmsP - channel- 12 V- 950 mV- 55 C+ 150 C500 mWSmd/smtPICOSTAR - 3ReelSi1 Channel- 12 V0.913 nCEnhancement Femtofet
AGM302D1


30V 115A 2.1m@10V,20A 80W 1.6V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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AGM-Semi 0
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AUD 0.245
Multiples of: 5

                   
ZXMN10A11KTC


N-Channel 100 V 2.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3
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Diodes Incorporated 0
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AUD 0.245
Multiples of: 2500

3.5 A100 V350 mOhmsN - Channel 4 V- 55 C+ 150 C8.5 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V5.4 nCEnhancement  
DMN3025LFG-13


Trans MOSFET N-CH 30V 7.5A Automotive 8-Pin PowerDI EP T/R
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Diodes Incorporated 0
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AUD 0.245
Multiples of: 3000

           Tape And Reel    Enhancement  
P0603BDD-A


TO-252-3 MOSFETs ROHS
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NIKO 0
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AUD 0.2453
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CJQ4606


SOIC-8 MOSFETs ROHS
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Changjing Electronics Technology 0
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AUD 0.2454
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DI006P02PW


MOSFET MOSFET, PowerQFN 2x2, -20V, -6A, P, 2W
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Diotec 0
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AUD 0.2455
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SI1079X-T1-GE3


MOSFET -30V Vds 12V Vgs SC89-6
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Vishay 0
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AUD 0.2457
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           Cut TapeSi      
NTD4969NT4G


ON Semiconductor MOSFET TRENCH 3.1 30V 9 mOhm NCH
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ON Semiconductor 0
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AUD 0.2458
Multiples of: 2500

12.7 A30 V19 mOhmsn - channel 1.8 V- 55 C+ 175 C26.3 Wsmd/smtDPAK - 3Reelsi1 channel+/- 20 V9 nC   
IRFHS8342TRPBF


Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
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Infineon 0
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AUD 0.2459
Multiples of: 4000

19 A30 V25 mOhmsN - Channel 2.35 V- 55 C+ 150 C2.1 WSmd/SmtPQFN - 6ReelSi1 Channel20 V4.2 nCEnhancement  
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