MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSC0802LSATMA1-VB


DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 1
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AUD 3.7413
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FDB9403_F085


MOSFET 40V 110A 1.2m N-Ch PowerTrench MOSFET
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ON Semiconductor 1
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AUD 3.8254
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110 A40 V1 mOhmsn - channel  - 55 C+ 175 C333 Wsmd/smtTO - 263ABReelsi1 channel    powertrench
IRF620STRLPBF


MOSFET N-Chan 200V 5.2 Amp
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Vishay 1
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AUD 4.163
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   n - channel  - 55 C+ 150 C smd/smtD2PAK - 2Reelsi      
CSD18535KTTT


MOSFET 60-V, N channel NexFET power MOSFET, single D2PAK, 2 mOhm 3-DDPAK/TO-263 -55 to 175
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Texas Instruments 1
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AUD 4.179
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200 A60 V2.3 mOhmsn - channel 1.9 V- 55 C+ 175 C300 Wsmd/smtTO - 263 - 3Cut Tapesi1 channel20 V81 nCenhancement nexfet
IRF6620TRPBF


International Rectifier MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC
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Infineon 1
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AUD 4.1961
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27 A20 V3.6 mOhmsN - Channel20 V2.45 V- 40 C+ 150 C89 WSmd/SmtDirectfetReelSi1 Channel20 V28 nC   
TK090E65Z-VB


650V 32A 85m@10V 4.5V 1 N-Channel TO-220 MOSFETs ROHS
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VBsemi Elec 1
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AUD 4.2013
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IPP80R900P7XKSA1


800V 6A 900mO@2.2A,10V 45W N Channel TO-220-3 MOSFETs ROHS
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Infineon 1
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AUD 4.2271
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6 A800 V770 mOhmsN - Channel 2.5 V- 55 C+ 150 C45 WThrough HolePG - TO - 220 - 3TubeSi1 Channel20 V15 nCEnhancement Coolmos
STP50N65DM6-VB


650V 32A 85m@10V 4.5V 1 N-Channel TO-220 MOSFETs ROHS
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VBsemi Elec 1
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AUD 4.2013
Multiples of: 1

                   
TK090A65Z-VB


650V 32A 85m@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 4.2013
Multiples of: 1

                   
IPB60R280P7ATMA1


Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; D2PAK
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Infineon 0
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AUD 1.2806
Multiples of: 1000

            Coolmos P7      
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