MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN8R7-80PS,127


MOSFET N-CHAN 80V 64A
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Nexperia 2522
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AUD 3.5448
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90 A80 V8.7 mOhmsN - Channel  - 55 C+ 175 C170 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V    
IPA60R199CP-VB


650V 20A 160m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 2.6541
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FCPF360N65S3R0L


MOSFET N Trench 650V 10A (Tc) 4.5V @ 1mA 360 mΩ @ 5A,10V TO-220F RoHS
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ON Semiconductor 1
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AUD 2.7471
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10 A650 V360 mOhmsN - Channel 2.5 V- 55 C+ 150 C27 WThrough HoleTO - 220F - 3TubeSi1 Channel30 V18 nCEnhancement  
IRF2907ZPBF


Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
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Infineon 1
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AUD 2.7746
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170 A75 V4.5 mOhmsN - Channel    330 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V180 nC   
SQM50P06-15L_GE3


MOSFET P-Channel 60V AEC-Q101 Qualified
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Vishay 1
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AUD 2.8423
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50 A- 60 V13 mOhmsP - Channel 2.5 V- 55 C+ 175 C150 WSmd/SmtTO - 263 - 3 Si1 Channel20 V155 nCEnhancementAec - Q101Trenchfet
SK03N150-T7


1.5kV 3A 8.2@10V,2.0A 4.5V@250uA 1PCSNChannel TO-247 MOSFETs ROHS
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Shikues 1
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AUD 2.8799
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IXTP26P10T


MOSFET MOSFET P-CH 200V 26A TO-220
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IXYS 1
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AUD 2.9672
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26 A100 V90 mOhmsP - Channel 4.5 V- 55 C+ 150 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel15 V52 nCEnhancement  
IRLS3034TRL7PP


N-Channel 40 V 240A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
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Infineon 1
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AUD 3.0209
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380 A40 V1 mOhmsN - Channel  - 55 C+ 175 C380 WSmd/SmtD2PAKReelSi1 Channel20 V120 nCEnhancement  
FDS86141


MOSFET 100V N-Channel PowerTrench MOSFET
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ON Semiconductor 1
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AUD 3.0466
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7 A100 V23 mOhmsN - Channel 3.1 V- 55 C+ 150 C5 WSmd/SmtSO - 8ReelSi1 Channel20 V6.7 nC  Powertrench
MOT8576T


80V 500A 0.7m@10V,50A 450W 4V@250uA 1PCSNChannel TOLL-8L MOSFETs ROHS
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MOT 0
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AUD 2.9051
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