MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF540PBF


N-Channel 100 V 28A (Tc) 150W (Tc) Through Hole TO-220AB
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Vishay 1111
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AUD 1.0657
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28 A100 V77 mOhmsN - Channel 2 V- 55 C+ 175 C150 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V72 nCEnhancement  
MS10N120HGC0


1.2kV 10A TO-247 MOSFETs ROHS
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MASPOWER 31
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AUD 2.4215
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BUK7M6R7-40H


Nexperia
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Nexperia 2
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AUD 2.3424
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LSD60R105HF


TO-220MF MOSFETs ROHS
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Lonten Semiconductor 1
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AUD 2.1534
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SQJ860EP-T1_GE3


MOSFET 40V Vds 60A Id AEC-Q101 Qualified
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Vishay 1
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AUD 2.1869
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60 A40 V5 mOhmsN - Channel 1.5 V- 55 C+ 175 C48 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel20 V55 nCEnhancementAec - Q101Trenchfet
VBMB18R09S


800V 600m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 2.2136
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IRFB4110PBFXKMA1


MOSFETs TRENCH >=100V
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Infineon 1
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AUD 2.2493
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120 A100 V4.5 mOhmsN - Channel 4 V- 55 C+ 175 C370 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V150 nCEnhancement  
AUIRFS3004-7P-VB


40V 200A 1.5m@10V 1PCSNChannel TO-263-7L MOSFETs ROHS
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VBsemi Elec 1
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AUD 2.3006
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SiHD11N80AE-VB


800V 9A 510mΩ@10V 4V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 1
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AUD 2.3208
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IPT020N10N3-VB


TOLL-8 MOSFETs ROHS
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VBsemi Elec 0
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AUD 2.166
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