MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPA95R450P7-VB


TO-220F MOSFETs ROHS
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VBsemi Elec 1
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AUD 3.0945

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FDH3632-VB


100V 6m@10V 1PCSNChannel TO-247AC MOSFETs ROHS
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VBsemi Elec 1
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AUD 3.2199

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HUF75652G3-VB


100V 6m@10V 1PCSNChannel TO-247AC MOSFETs ROHS
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VBsemi Elec 1
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AUD 3.2199

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FDBL86062-F085-VB


TOLL-8 MOSFETs ROHS
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VBsemi Elec 1
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AUD 3.2458

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IPA60R520E6


MOSFET N-Ch 650V 8.1A TO220FP-3 CoolMOS E6
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Infineon 1
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AUD 3.2559

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8.1 A600 V470 mOhmsN - Channel  - 55 C+ 150 C29 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V23.4 nC  Coolmos
AUIRF3805L


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms
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Infineon 1
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AUD 3.4806

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210 A55 V3.3 mOhmsN - Channel  - 55 C 300 WThrough HoleI2PAK - 3TubeSi1 Channel20 V190 nCEnhancementAec - Q101 
VBL16R25SFD


600V 4.3A 120m@10V 4.5V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 1
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AUD 3.5841

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IPAN70R360P7S


MOSFET CONSUMER
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Infineon 1
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AUD 3.6962

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STB24N60M6


MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package
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STMicroelectronics 1
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AUD 3.7147

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22 A600 V190 mOhmsN - Channel     Smd/SmtD2PAK - 3Cut TapeSi1 Channel     
NCEP026N10T


TO-247 MOSFETs ROHS
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NCE Power 0
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AUD 3.3264

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