MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDB0105N407L


MOSFET 40V N-Channel Power Trench MOSFET
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ON Semiconductor 2
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AUD 14.6779
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460 A40 V1.8 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263 - 7ReelSi1 Channel+/- 20 V208 nCEnhancement Powertrench
IPW60R031CFD7-VB


600V 87A 26m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 2
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AUD 13.9173
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STH30N65DM6-7AG


MOSFET N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET Automotive-grade
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STMicroelectronics 2
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AUD 15.1395
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18 A650 V115 mOhmsN - Channel 4.75 V- 55 C+ 150 C223 WSMD/SMTTO - 263 - 3Cut Tape , ReelSi1 Channel- 25 V , + 25 V46 nCEnhancement MDmesh
IXTH64N65X


MOSFET 650V/64A Power MOSFET
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IXYS 2
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AUD 15.9254
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64 A650 V51 mOhmsn - channel 3 V- 55 C+ 150 C890 Wthrough holeTO - 247 - 3Tubesi1 channel30 V143 nCenhancement hiperfet
FCH041N65EF_F155


MOSFET 700V NChnl SuperFET II FRFET MOSFET
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ON Semiconductor 2
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AUD 17.009
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76 A650 V36 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 3Bulksi1 channel+/- 20 V298 nCenhancement superfet, frfet
IXTT170N10P


MOSFET 170 Amps 100V 0.009 Ohm Rds
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IXYS 2
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AUD 18.597
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170 A100 V9 mOhmsN - Channel  - 55 C+ 175 C714 WSmd/SmtTO - 268 - 3TubeSi1 Channel20 V Enhancement  
IPA60R099C6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 37.9A; 35W; TO220FP
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Infineon 2
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AUD 19.6715
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            coolmos c6      
IAUT300N08S5N014ATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 2
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AUD 21.6606
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300 A80 V1.4 mOhmsN - Channel 2.2 V- 55 C+ 175 C300 WSmd/SmtHSOF - 8Cut TapeSi1 Channel20 V187 nCEnhancement  
C3M0016120D


TO-247-3 MOSFETs ROHS
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FUXINSEMI 2
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AUD 23.0161
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IXTK140N30P


MOSFET Polar Power MOSFET
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IXYS 2
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AUD 29.6836
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140 A300 V20 mOhmsn - channel 5 V- 55 C+ 150 C1.04 kWthrough holeTO - 264 - 3Tubesi1 channel20 V185 nCenhancement polar
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