MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STO67N60M6


N-Channel 600V 34A (Tc) 150W (Tc) Surface Mount TOLL (HV)
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STMicroelectronics 2
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AUD 9.6827
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          8 - POWERSFNTape And ReelMosfet (Metal Oxide)      
FCB20N60


MOSFET SF1 600V 190MOHM E D2PAK
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ON Semiconductor 2
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AUD 9.7668
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   N Channel               
IMZA65R072M1HXKSA1


MOSFET SILICON CARBIDE MOSFET
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Infineon 2
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AUD 9.904
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28 A650 V94 mOhmsN - Channel 5.7 V- 55 C+ 150 C96 WThrough HoleTO - 247 - 4Coolsic , TubeSiC1 Channel- 5 V , + 23 V22 nCEnhancement CoolSiC
IXFA90N20X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2
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IXYS 2
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AUD 10.2388
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IPW60R037CSFD-VB


600V 64A 36m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 2
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AUD 9.8193
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TK31N60W,S1VF(S


MOSFET N Trench 600V 30.8A 3.7V @ 1.5mA 88 mΩ @ 15.4A,10V TO-247 RoHS
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Toshiba 2
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AUD 10.5364
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SIHA21N60EF-E3


Vishay Semiconductors MOSFET N-Channel 600V EF Series
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Vishay 2
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AUD 10.8262
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21 A600 V176 mOhmsn - channel 2 V- 55 C+ 150 C35 Wthrough holeTO - 220 - 3Reelsi1 channel+/- 30 V56 nCenhancement ef series
IPL65R070C7


Infineon Technologies MOSFET HIGH POWER BEST IN CLASS
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Infineon 2
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AUD 11.0589
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28 A650 V62 mOhmsN - Channel 3 V- 40 C+ 150 C169 WSmd/SmtVSON - 4ReelSi1 Channel20 V64 nCEnhancement Coolmos C7
IPT60R080G7


MOSFET HIGH POWER_NEW
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Infineon 2
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AUD 11.3281
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NVMFS5A160PLZWFT1G


MOSFET -60V7.7MOHMSINGLE
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ON Semiconductor 1
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AUD 12.4941
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100 A60 V7.7 mOhmsP - Channel 1.2 V- 55 C+ 175 C200 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V160 nCEnhancementAec - Q101 
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