MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS86180


MOSFET 100V/20V N-Channel PTNG MOSFET
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ON Semiconductor 2
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AUD 5.5427
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151 A100 V2.4 mOhmsN - Channel 2 V- 55 C+ 150 C138 WSmd/SmtPOWER - 56 - 8Cut TapeSi1 Channel20 V84 nCEnhancement  
WMK53N60F2


Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
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Wayon 2
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AUD 5.8716
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            WMOS F2      
STB5N80K5


MOSFET POWER MOSFET
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STMicroelectronics 2
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AUD 5.908
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4 A800 V1.5 Ohmsn - channel 3 V- 55 C+ 150 C60 Wsmd/smtTO - 263 - 3Cut Tapesi1 channel30 V5 nCenhancement mdmesh
SIR890DP-T1-GE3


MOSFET 20V 50A 50W 2.9mohm @ 10V
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Vishay 2
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AUD 6.0081
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet, Powerpak
SQM10250E_GE3


MOSFET 250V Vds 20V Vgs TO-263
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Vishay 2
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AUD 6.1401
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65 A250 V24.4 mOhmsN - Channel 3 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V50 nC   
SUM85N15-19-E3


MOSFET 150V 85A 375W 19mohm @ 10V
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Vishay 2
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AUD 6.1586
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85 A150 V19 mOhmsn - channel 2 V- 55 C+ 175 C375 Wsmd/smtTO - 263 - 3Reelsi1 channel10 V76 nCenhancement trenchfet
SI7478DP-T1-E3


N-Channel 60 V 15A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
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Vishay 2
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AUD 6.2983
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   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
IPW60R060P7-VB


600V 47A 60m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 2
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AUD 6.0641
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AUIRF3205Z


International Rectifier MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms
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Infineon 2
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AUD 6.6241
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110 A55 V6.5 mOhmsN - Channel  - 55 C 170 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V76 nCEnhancementAec - Q101 
IXFA20N50P3


MOSFET Polar3 HiPerFET Power MOSFET
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IXYS 1
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AUD 5.6418
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20 A500 V300 mOhmsN - Channel     Smd/SmtTO - 263 - 3TubeSi     Hiperfet
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