MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7489DP-T1-E3


Vishay Semiconductors MOSFET 100V 28A 83W
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Vishay 43
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 3.0905

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7.8 A- 100 V41 mOhmsP - Channel20 V - 55 C+ 150 C5.2 WSmd/SmtSO - 8Reel    Enhancement  
LSC20N65F-VB


650V 20A 160m@10V 1PCSNChannel TO-220AB MOSFETs ROHS
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VBsemi Elec 2
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 2.6541

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SIR668DP-T1-RE3


MOSFET 100V Vds 20V Vgs PowerPAK SO-8
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Vishay 2
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 2.757

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95 A100 V4 mOhmsN - Channel 2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V108 nCEnhancement Trenchfet, Powerpak
HSH250N10


100V 250A 1.9mΩ@10V,40A 411W 3V@250uA 55pF@50V N Channel 10.15nF@50V 195nC@10V -55℃~+150℃@(Tj) TO-263 MOSFETs ROHS
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HUASHUO 2
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 2.8046

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FCPF22N60NT-VB


650V 190m@10V 3.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 2
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 2.8914

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BSC040N10NS5ATMA1-VB


DFN-8(5x6) MOSFETs ROHS
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VBsemi Elec 2
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 2.9871

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Hot FDBL9403-F085T6


N-Channel 40V 50A (Ta), 300A (Tc) 4.3W (Ta), 159.6W (Tc) Surface Mount 8-HPSOF
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ON Semiconductor 2
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 3.0454

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300 A40 V950 mOhmsN - Channel 4 V- 55 C+ 175 C159.6 WSMD/SMTTO - LL8 - 8 Si1 Channel- 20 V , + 20 V108 nCEnhancement  
NVMFS027N10MCLT1G


MOSFET PTNG 100V LL SO8FL
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ON Semiconductor 2
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 3.0554

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SUM110P06-08L-E3


MOSFET 60V 110A 272W 8.0mohm @ 10V
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Vishay 2
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between Mon. 24 Aug to Fri. 28 Aug
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AUD 3.2388

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110 A60 V8 mOhmsP - Channel 1 V- 55 C+ 175 C272 WSmd/SmtTO - 263ReelSi1 Channel- 10 V160 nCEnhancement Trenchfet
6R190C6 TO220-VB


650V 1PCSNChannel TO-220 MOSFETs ROHS
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VBsemi Elec 1
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between Mon. 07 Sep to Thu. 10 Sep
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AUD 3.1187

Multiples of: 1

                   
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