MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK20N60W,S1VF


MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
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Toshiba 90
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AUD 4.7284
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20 A600 V130 mOhmsn - channel30 V3.7 V- 55 C+ 150 C165 Wthrough holeTO - 247 - 3 si1 channel30 V48 nCenhancement dtmosiv
IPD85P04P4-07


Infineon Technologies MOSFET P-Ch -40V -85A DPAK-2 OptiMOS-P2
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Infineon 2
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AUD 4.1455
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- 85 A- 40 V7.3 Ohmsp - channel 4 V- 55 C+ 175 C88 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V89 nCenhancementaec - q101optimos
AOTF266L


Transistor: N-MOSFET; unipolar; 60V; 55A; 22.5W; TO220F
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Alpha & Omega 2
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AUD 4.2894
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STW30N80K5-VB


800V 20A 205mΩ@10V 4.5V 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 2
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AUD 4.4216
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STP42N60M2-EP-VB


600V 32A 85m@10V 4.5V 1 N-Channel TO-220AB MOSFETs ROHS
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VBsemi Elec 2
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AUD 4.3127
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STW27N60M2-EP


MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package
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STMicroelectronics 2
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AUD 4.9827
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20 A600 V163 mOhmsn - channel 2 V- 55 C+ 150 C170 Wthrough holeTO - 247 - 3 si1 channel+/- 25 V33 nCenhancement mdmesh
RRS100P03HZGTB


MOSFETs AECQ
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ROHM 2
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AUD 5.0806
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IXFA230N075T2


MOSFET TrenchT2 HiperFETs Power MOSFET
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IXYS 2
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AUD 5.203
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230 A75 V4.2 mOhmsn - channel     smd/smtTO - 263 - 3Tubesi     hiperfet
SiHF068N60EF-VB


600V 43A 60m@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 2
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AUD 5.3053
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STF42N60M2-EP-VB


600V 32A 85mΩ@10V 4.5V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 0
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AUD 4.1117
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