MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WML36N60F2


Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 34W
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Wayon 8
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AUD 4.6597
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            WMOS F2      
IXTP14N60X2


N-Channel 600V 14A (Tc) 180W (Tc) Through Hole TO-220
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IXYS 8
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AUD 5.3571
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14 A600 V250 mOhmsN - Channel 2.5 V- 55 C+ 150 C180 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V16.7 nCEnhancement  
IST011N06NM5


STOLL MOSFETs ROHS
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Infineon 8
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AUD 5.5477
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IRF6894MTRPBF


International Rectifier MOSFET 25V 1 N-CH HEXFET 1.3mOhms 26nC
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Infineon 8
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AUD 7.4863
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170 A25 V1.7 mOhmsN - Channel16 V   54 WSmd/SmtDirectfet - 7ReelSi1 Channel16 V29 nC  Directfet
NTE2947


Transistor: N-MOSFET; 500V; 18A; TO220
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NTE 8
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AUD 8.2955
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TK35N65W5,S1F


Toshiba MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS
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Toshiba 8
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AUD 10.1627
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35 A650 V80 mOhmsn - channel 3 v to 4.5 V- 55 C+ 150 C270 Wthrough holeTO - 247 - 3 si1 channel30 V115 nCenhancement  
NTE2371


Transistor: P-MOSFET; 100V; 19A; TO220
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NTE 8
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AUD 13.9582
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IPW60R040C7


MOSFET HIGH POWER_NEW
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Infineon 8
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AUD 17.5594
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AUIRFP4110


MOSFET N-CHANNEL 100+
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Infineon 8
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AUD 18.0483
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120 A100 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C370 WThrough HoleTO - 247AC - 3TubeSi1 Channel+/- 20 V210 nCEnhancementAec - Q101 
IXFH180N20X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
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IXYS 8
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AUD 24.5104
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           Tube      Hiperfet
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