MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUC60N04S6N031HATMA1


MOSFET MOSFET_(20V 40V)
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Infineon 18
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AUD 1.7415
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113 A40 V3.1 mOhmsN - Channel 3 V- 55 C+ 175 C75 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancement OptiMOS
NCEP033N10D


100V 160A 2.7mΩ@10V,80A 245W 3V@250uA N Channel TO-263-2 MOSFETs ROHS
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NCE Power 14
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AUD 1.759
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FDMA1029PZ


Mosfet Array 2 P-Channel (Dual) 20V 3.1A 700mW Surface Mount 7-SOIC
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ON Semiconductor 8
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AUD 1.5559
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3.1 A20 V60 mOhmsP - Channel  - 55 C+ 150 C1.4 WSmd/SmtMICRO - FETReelSi2 Channel12 V Enhancement Powertrench
STP30NS15LFP-VB


200V 20A 58m@10V 1PCSNChannel TO-220F MOSFETs ROHS
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VBsemi Elec 8
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AUD 1.6127
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IRFS3006PBF-VB


60V 2m@10V 2V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 8
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AUD 2.0933
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STF100N6F7


N-Channel 60 V 46A (Tc) 25W (Tc) Through Hole TO-220FP
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STMicroelectronics 8
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AUD 2.2944
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46 A60 V5.6 mOhmsN - Channel 2 V- 55 C+ 175 C25 WThrough HoleTO - 220FP - 3TubeSi1 Channel+/- 20 V30 nCEnhancement Stripfet
AOB411L-VB


60V 1PCSPChannel TO-263 MOSFETs ROHS
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VBsemi Elec 8
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AUD 2.3244
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SQM85N15-19-GE3-VB


150V 90A 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 8
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AUD 2.5791
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F21NM50N-VB


650V 13A 0.19@10V,11A 200W 2V@250uA TO-220F MOSFETs ROHS
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VBsemi Elec 8
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AUD 2.6541
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GS-065-008-1-L


MOSFET 650V, 8A, GaN E-HEMT, 5x6 PDFN, Bottom-side cooled
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Gan Systems 8
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AUD 2.6761
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8 A650 V541 mOhmsN - Channel 1.4 V- 40 C+ 150 C Smd/SmtPDFN - 6Cut TapeGan Si1 Channel- 10 v to 7 V1.5 nCEnhancement  
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