MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRL3705ZSTRL


Infineon IR MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms
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Infineon 8
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AUD 2.9388
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44 A55 V8 mOhmsn - channel  - 55 C+ 175 C130 Wsmd/smtTO - 252 - 3Reelsi1 channel16 V enhancementaec - q101 
IPB120N04S4-01


Infineon Technologies MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T2
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Infineon 8
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AUD 3.0119
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120 A40 V2 mOhmsn - channel  - 55 C+ 175 C300 Wsmd/smtD2PAK - 3Reelsi1 channel20 V enhancementaec - q101optimos
IPD50P04P413ATMA1


Infineon Technologies MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2
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Infineon 8
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AUD 3.6099
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50 A40 V12.6 mOhmsp - channel 4 V- 55 C+ 175 C58 Wsmd/smtTO - 252 - 3Reelsi1 channel10 V39 nCenhancementaec - q101 
STP4N80K5


MOSFET N-CH 800V 2.1Ohm 3A Zener-protected
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STMicroelectronics 8
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AUD 3.6285
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3 A800 V2.1 Ohmsn - channel30 V4 V- 55 C+ 150 C60 Wthrough holeTO - 220 - 3Tubesi1 channel30 V10.5 nCenhancement supermesh
MS170N15IDC0


150V 170A TO-247 MOSFETs ROHS
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MASPOWER 8
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AUD 3.7139
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R6015ENX


ROHM Semiconductor MOSFET
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ROHM 8
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AUD 4.0738
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15 A600 V260 mOhmsN - Channel 2 V- 55 C+ 150 C60 WThrough HoleTO - 220FP - 3BulkSi1 Channel20 V40 nCEnhancement  
IXFA7N80P


MOSFET 7 Amps 800V 1.44 Rds
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IXYS 8
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AUD 4.4925
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7 A800 V1.4 Ohmsn - channel  - 55 C+ 150 C200 Wsmd/smtTO - 263 - 3Tubesi1 channel30 V enhancement hyperfet
WMM220N20HG3


Transistor: N-MOSFET; unipolar; TO263
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Wayon 8
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AUD 4.597
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IRFP4410ZPBF-VB


100V 90A 1PCSNChannel TO-247 MOSFETs ROHS
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VBsemi Elec 8
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AUD 4.6404
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WMK36N60F2


Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
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Wayon 8
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AUD 4.6597
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            WMOS F2      
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