MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTH220N20X4


MOSFET Discrete MOSFET 220A 200V X4 TO247
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IXYS 56
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AUD 22.0328
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220 A200 V5.5 mOhmsN - Channel 4.5 V- 55 C+ 175 C800 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , + 20 V157 nCEnhancement  
BSS84


SOT-23 MOSFETs ROHS
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Blue Rocket 19
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AUD 0.0296
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STP240N10F7


STMicroelectronics MOSFET N-Ch 100V 2.5mOhm 180A STripFET VII
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STMicroelectronics 10
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AUD 6.4776
Multiples of: 1

110 A100 V3.2 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C300 WThrough HoleTO - 220 - 3TubeSi  160 nCEnhancement  
STW34NM60ND


Transistor: N-MOSFET; unipolar; 600V; 18A; 190W; TO247
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STMicroelectronics 10
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AUD 7.6896
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            mdmesh      
IXFH120N20P


MOSFET 120 Amps 200V 0.022 Rds
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IXYS 10
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AUD 10.4786
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120 A200 V22 mOhmsN - Channel 5 V- 55 C+ 175 C714 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V152 nCEnhancement Hiperfet
IXFQ60N25X3


MOSFET 250V/60A Ultra Junct ion X3-Class MOSFET
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IXYS 10
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AUD 11.7851
Multiples of: 1

60 A250 V19 mOhmsN - Channel 2.5 V- 55 C+ 150 C320 WThrough HoleTO - 3P - 3TubeSi1 Channel20 V50 nCEnhancement Hiperfet
MS330N15JDF4


SOT-227 MOSFETs ROHS
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MASPOWER 10
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AUD 46.5728
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IXFK240N25X3


MOSFET 250V UltraJunc X3 Pwr MOSFET
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IXYS 10
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AUD 51.7164
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240 A250 V4.1 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.25 kWThrough HoleTO - 264 - 3TubeSi1 Channel- 20 V , 20 V345 nCEnhancement HiPerFET
AO3407-HXY


30V 4.2A 1.5W 52mΩ@10V,4A P Channel SOT-23-3L MOSFETs ROHS
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HXY MOS 9
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AUD 0.0326
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2300F


MOSFET N Trench 20V 6A (Tc) 900mV @ 250uA 27 mΩ @ 2.3A,4.5V SOT-23 RoHS
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GOFORD 9
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AUD 0.0375
Multiples of: 10

                   
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