MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ZXMC6A09DN8TA


MOSFET Comp. 60V NP-Chnl
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Diodes Incorporated 213
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AUD 2.2215
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5.1 A60 V70 mOhmsN - Channel, P - Channel  - 55 C+ 150 C2.1 WSmd/SmtSO - 8Cut TapeSi2 Channel20 V Enhancement  
SI1469DH-T1-GE3


MOSFET -20V Vds 12V Vgs SC70-6
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Vishay 10
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AUD 1.6144
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           Cut TapeSi     Trenchfet
FQD4P25TM_WS-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 10
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AUD 1.6784
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SIR106ADP-T1-RE3


MOSFET N-CHANNEL 100V PowerPAK SO-8
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Vishay 10
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AUD 1.8199
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65.8 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel10 V26.5 nC , 34.5 nCEnhancement Trenchfet
IRF200S234


MOSFET TRENCH_MOSFETS
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Infineon 10
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AUD 1.9748
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90 A200 V14 mOhmsN - Channel 3 V- 55 C+ 175 C417 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel20 V162 nCEnhancement  
RS45N50W


TO-247-3 MOSFETs ROHS
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REASUNOS 10
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AUD 2.164
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SQ4401EY-T1_GE3


P-Channel 40 V 17.3A (Tc) 7.14W (Tc) Surface Mount 8-SOIC
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Vishay 10
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AUD 2.4691
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- 17.3 A- 40 V11 mOhmsP - Channel 1.5 V- 55 C+ 175 C7.14 WSmd/SmtSO - 8ReelSi1 Channel20 V74 nCEnhancementAec - Q101Trenchfet
MS50N20FC


200V 50A 40m@10V,28A 300W 4V@250A 1 N-Channel TO-247 MOSFETs ROHS
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MASPOWER 10
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AUD 2.5932
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SQD50P08-25L-GE3-VB


100V 50A 17m@10V 1PCSPChannel TO-252 MOSFETs ROHS
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VBsemi Elec 9
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AUD 1.6325
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IPD80R600P7


MOSFET LOW POWER_NEW
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Infineon 1
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AUD 2.6232
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