MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPD320N20N3G


MOSFET N Channel 200V 34A(Tc) 4V @ 90uA 32mO @ 34A,10V TO-252 RoHS
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Infineon 2410
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AUD 4.3591
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IPP80N06S2L07AKSA2


Transistor: N-MOSFET; unipolar; 60V; 80A; 210W; PG-TO220-3
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Infineon 10
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AUD 2.6269
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            Optimos      
TK16A60W,S4VX(M


Transistor: N-MOSFET; unipolar; 600V; 15.8A; 40W; TO220FP
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Toshiba 10
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AUD 2.7578
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SQJ431AEP-T1_GE3


MOSFET -200V Vds 20V Vgs PowerPAK SO-8L
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Vishay 10
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AUD 2.8874
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9.4 A200 V305 mOhmsP - Channel 2. 5 V- 55 C+ 175 C68 WSmd/SmtPOWERPAK - SO - 8L - 4Cut TapeSi1 Channel10 V55 nCEnhancement Powerpak
CSD17555Q5A


Texas Instruments MOSFET 30V N-ch NexFET Pwr MOSFET
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Texas Instruments 10
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AUD 3.3984
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100 A30 V3.4 mOhmsn - channel 1.5 V- 55 C+ 150 C3 Wsmd/smtVSON - FET - 8Reelsi1 channel20 V23 nC  nexfet
STFU10NK60Z


MOSFET N-channel 600 V, 0.68 Ohm typ., 10 A SuperMESH Power MOSFET in TO-220FP ultra narrow leads package
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STMicroelectronics 10
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AUD 3.5164
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10 A600 V680 mOhmsN - Channel 3 V- 55 C+ 150 C35 WThrough HoleTO - 220FP - 3 Si1 Channel30 V48 nCEnhancement Supermesh
STW35N60DM2


Transistor: N-MOSFET; unipolar; 600V; 17A; 210W; TO247
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STMicroelectronics 10
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AUD 3.6448
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            mdmesh      
STI47N60DM6AG


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 10
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AUD 5.1388
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NTMFS6H818NT1G


MOSFET TRENCH 8 80V NFET
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ON Semiconductor 10
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AUD 6.3698
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123 A80 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C136 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V46 nCEnhancement  
NTE2914


Transistor: N-MOSFET; 60V; 25A; TO220F
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NTE 10
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AUD 6.4776
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