MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FMM75-01F


IXYS MOSFET 75 Amps 100V
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IXYS 24
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AUD 26.8507
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75 A100 V25 mOhmsN - Channel20 V4 V- 55 C+ 125 C Through HoleISOPLUS - I4 - 5TubeSi 20 V180 nC  Hiperfet, Isoplus I4 - Pac
IXFK32N80P


MOSFET 32 Amps 800V 0.27 Rds
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IXYS 24
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AUD 29.721
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32 A800 V270 mOhmsN - Channel 5 V- 55 C+ 150 C830 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V150 nCEnhancement Hiperfet
FMM22-06PF


IXYS MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 600V 12A
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IXYS 24
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AUD 31.1761
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12 A600 V350 mOhmsN - Channel 3 V- 55 C+ 150 C130 WThrough HoleISOPLUS - I4 - 5TubeSi2 Channel30 V58 nC   
APT8030LVFRG


MOSFET FG, FREDFET, 800V, TO-264, RoHS
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Microchip 24
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AUD 37.019
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            POWER MOS 5®      
IXFL32N120P


MOSFET 32 Amps 1200V
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IXYS 24
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AUD 49.9194
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24 A1.2 kV340 mOhmsN - Channel  - 55 C+ 150 C520 WThrough HoleTO - 264 - 3TubeSi1 Channel30 V Enhancement Hiperfet
FDY1002PZ


MOSFET -20V DUAL P-CHAN POWERTRENCH
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ON Semiconductor 23
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AUD 0.1165
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830 mA20 V500 mOhmsP - Channel  - 55 C+ 150 C625 mWSmd/SmtSC - 89 - 6ReelSi2 Channel8 V Enhancement Powertrench
DMN1033UCB4-7


MOSFET N-Ch Enh Mode FET 12V 26mOhm4.5V 5.5A
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Diodes Incorporated 23
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AUD 0.1781
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   N - Channel     Smd/SmtU - WLB1818 - 4Cut TapeSi2 Channel     
BSR202N L6327


MOSFET OptiMOS 2 Sm-Signal TRANSISTOR 20V 3.8A
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Infineon 23
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AUD 0.2446
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3.8 A20 V21 mOhmsN - Channel 700 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSC - 59 - 3ReelSi1 Channel4.5 V5.8 nCEnhancement  
SSM6J511NU,LF(T


Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6
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Toshiba 23
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AUD 0.3093
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DMT6009LFG-7


MOSFET 60V N-Ch Enh FET Low Rdson
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Diodes Incorporated 23
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AUD 0.3135
Multiples of: 1

         Smd/SmtPowerdi3333 - 8ReelSi      
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