MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ALD212900SAL


MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
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Advanced Linear Devices 24
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AUD 6.3866
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79 mA10 V14 Ohmsn - channel 20 mV0 C+ 70 C500 mWsmd/smtSOIC - 8Tubesi2 channel10.6 V depletion  
GC041N65QF


TO-247 MOSFETs ROHS
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GOFORD 24
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AUD 7.2846
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TK115N65Z5,S1F


MOSFETs N-ch MOSFET, 650 V, 0.115 ohma.10V, TO-247, DTMOS?
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Toshiba 24
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AUD 8.1104
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24 A650 V115 mOhmsN - Channel 4.5 V + 150 C190 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V42 nCEnhancement  
STW70N60DM6-4


MOSFET N-channel 600 V, 36 mOhm typ 62 A MDmesh DM6 Power MOSFET
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STMicroelectronics 24
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AUD 8.2254
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5.4 A600 V42 mOhmsN - Channel 3.25 V- 55 C+ 150 C390 WThrough HoleTO - 247 - 4TubeSi1 Channel10 V99 nCEnhancement Mdmesh
IMW40R025M2HXKSA1


MOSFETs SIC-MOS
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Infineon 24
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AUD 9.1612
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65 A400 V32.1 mOhmsN - Channel 4.5 V- 55 C+ 175 C195 WThrough HoleTO - 247 - 3TubeSiC1 Channel- 7 V , 23 V36 nCEnhancement CoolSiC
BUK7S0R7-40HJ


MOSFET 40V N-CHANNEL STD LEVEL
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Nexperia 24
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AUD 9.3777
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MS30N100HGC0


1kV 30A 280m@10V,15A 290W 5.5V@2.5mA 1 N-Channel TO-247 MOSFETs ROHS
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MASPOWER 24
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AUD 13.9207
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TK62J60W,S1VQ


Toshiba MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC
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Toshiba 24
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AUD 16.4343
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61.8 A600 V33 mOhmsN - Channel 2.7 v to 3.7 V- 55 C+ 150 C30 WThrough HoleTO - 3P - 3ReelSi1 Channel30 V180 nCEnhancement  
IXTR90P20P


MOSFET -90.0 Amps -200V 0.048 Rds
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IXYS 24
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AUD 17.197
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53 A200 V48 mOhmsP - Channel 4 V- 55 C+ 150 C312 WThrough HoleTO - 247 - 3TubeSi 20 V205 nCEnhancement Polarp
FMM50-025TF


IXYS MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 250V 30A
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IXYS 24
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AUD 25.5761
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30 A250 V60 mOhmsN - Channel 4.5 V- 55 C+ 150 C125 WThrough HoleISOPLUS - I4 - 5TubeSi 30 V78 nC   
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