MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
08N50C3 TO252-VB


650V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 24
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AUD 0.8948
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TPC8107&5-VB


SO-8 MOSFETs ROHS
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VBsemi Elec 24
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AUD 0.947
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FDD8N50NZTM-VB


650V 7A 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 24
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AUD 0.974
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VBL165R10


670V 10A 0.86O@10V,10A N Channel TO-263 MOSFETs ROHS
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VBsemi Elec 24
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AUD 0.9825
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FDD390N15A-VB


150V 1PCSNChannel TO-252 MOSFETs ROHS
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VBsemi Elec 24
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AUD 1.0095
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SQM110N05-06L-GE3-VB


60V 150A 4m@10V 1PCSNChannel TO-263 MOSFETs ROHS
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VBsemi Elec 24
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AUD 1.024
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AO4488-VB


SOP-8 MOSFETs ROHS
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VBsemi Elec 24
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AUD 1.0359
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HSMA4086


40V 330A 140W 0.5m@10V,20A 1.7V@250uA 1 N-Channel LFPRAK-8(5x6) MOSFETs ROHS
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HUASHUO 24
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AUD 1.0594
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STD3NK90ZT4


900V 4A 3.5@10V 75W 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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Tokmas 24
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AUD 1.0856
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SIA921EDJ-T1-GE3


MOSFET -20V 59mOhm@4.5V 4.5A P-Ch G-III
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Vishay 24
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AUD 1.1286
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4.5 A20 V48 mOhms , 48 mOhmsP - Channel 1.4 V- 55 C+ 150 C7.8 WSmd/SmtPOWERPAK SC - 70 - 6 DUALReelSi2 Channel12 V23 nC , 23 nCEnhancement Trenchfet, Powerpak
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