MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
GT009N04TL


40V 340A 0.81mΩ@10V 3V 1PCSNChannel TOLL MOSFETs ROHS
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GOFORD 62
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AUD 3.6222
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SUM110N10-09-E3


MOSFET 100V 110A 375W
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Vishay 62
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AUD 3.6776
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110 A100 V9.5 mOhmsN - Channel 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel10 V110 nCEnhancement Trenchfet
PSMN3R9-60PSQ


MOSFET N-channel 60 V 3.9 mo FET
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Nexperia 62
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AUD 5.0567
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130 A60 V2.94 mOhmsN - Channel20 V3 V- 55 C+ 175 C263 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V103 nCEnhancement  
UF3C120150K4S


MOSFET 1200V/150mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
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UnitedSiC 62
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AUD 12.3955
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18.4 A1.2 kV330 mOhmsN - Channel 3.5 V- 55 C+ 175 C166.7 WThrough HoleTO - 247 - 4TubeSic1 Channel25 V25.7 nCEnhancement  
ADQ120N080G2


1.2kV 35A 188W 80m 3V TO-247-4L MOSFETs ROHS
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ANHI 62
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AUD 14.0956
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RS1E180BNTB


N-Channel 30 V 60A (Tc) 3W (Ta), 25W (Tc) Surface Mount CPT3
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ROHM 61
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AUD 0.3169
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18 A30 V3.5 mOhmsN - Channel 1 V- 55 C+ 150 C25 WSmd/SmtHSOP - 8Cut TapeSi1 Channel20 V46 nCEnhancement  
VBZA8858


30V 10A 11mO@10V,10A 1PCSN-Channel&1PCSP-Channel SO-8 MOSFETs ROHS
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VBsemi Elec 61
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AUD 0.3756
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IRF5305STRL(UMW)


TO-263 MOSFETs ROHS
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Youtai 61
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AUD 0.4066
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HAT1047RJ


30V 11.6A 12.5mO@10V,11.6A P Channel SO-8 MOSFETs ROHS
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VBsemi Elec 61
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AUD 0.4068
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VBZFB06N02


30V 35A 20mO@10V,35A N Channel TO-251 MOSFETs ROHS
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VBsemi Elec 61
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AUD 0.4286
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