MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
VBZMB20N65S


650V 20A 190mO@10V,20A N Channel TO-220F-3 MOSFETs ROHS
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VBsemi Elec 63
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AUD 2.8499
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ISC055N15NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 63
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AUD 3.3164
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130 A150 V5.5 mOhmsN - Channel 3.5 V- 55 C+ 175 C214 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V43 nCEnhancement  
ISC035N10NM5LF2ATMA1


MOSFETs N
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Infineon 63
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AUD 3.3821
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164 A100 V3.5 mOhmsN - Channel 3.9 V- 55 C+ 175 C217 WSMD/SMTTDSON - 8 FLReel , Cut TapeSi1 Channel- 20 V , + 20 V70 nCEnhancement OptiMOS
IPTC063N15NM5ATMA1


MOSFETs IFX FET >100-150V
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Infineon 63
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AUD 3.3821
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122 A150 V6.3 mOhmsN - Channel 3 V- 55 C+ 175 C214 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , 20 V50 nCEnhancement  
CI60N120SM4


TO-247-4L SiC MOSFETs ROHS
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Tokmas 63
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AUD 4.6494
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STW22N95K5


Transistor: N-MOSFET; unipolar; 950V; 11A; 250W; TO247
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STMicroelectronics 63
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AUD 7.119
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            Mdmesh      
FCH110N65F-F155


MOSFET N Trench 650V 35A (Tc) 5V @ 3.5mA 110 mΩ @ 17.5A,10V TO-247-3 RoHS
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ON Semiconductor 63
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AUD 9.9211
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NTH027N65S3F-F155


SF3 FRFET 650V 27MOHM
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ON Semiconductor 63
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AUD 26.2127
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75 A650 V23 mOhmsN - Channel 3 V- 55 C+ 150 C595 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V259 nCEnhancement SuperFET III
DMT36M1LPS-13


MOSFET MOSFETBVDSS: 25V-30V
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Diodes Incorporated 62
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AUD 0.3481
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65 A30 V4.8 mOhmsN - Channel 1 V- 55 C+ 150 C42 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V16.7 nCEnhancement  
ALD1107PBL


MOSFET Quad P-Channel Array
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Advanced Linear Devices 53
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AUD 6.1403
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2 mA12 V1.2 kOhmsP - Channel 400 mV0 C+ 70 C500 mW (1/2 w)Through HolePDIP - 14TubeSi4 Channel- 10.6 V Enhancement  
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