MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN62D0SFD-7


Diodes Incorporated MOSFET MOSFET BVDSS
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Diodes Incorporated 460
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AUD 0.1007
Multiples of: 5

540 mA60 V2 OhmsN - Channel 1.6 V- 55 C+ 150 C0.89 WSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel20 V0.87 nCEnhancement  
SIHFPS37N50A-GE3


MOSFET 500V N-CH HEXFET
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Vishay 61
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AUD 9.3403
Multiples of: 1

36 A500 V130 mOhmsN - Channel 4 V- 55 C+ 150 C446 WThrough HoleSUPER - 247 - 3TubeSi1 Channel- 30 V , + 30 V180 nCEnhancement  
LSIC1MO170T0750


N-Channel 1700V 5A (Tc) Surface Mount TO-263-7
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Littelfuse 61
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AUD 9.6373
Multiples of: 1

6.4 A1.7 kV750 mOhmsN - Channel 1.8 V- 55 C+ 175 C65 WSMD/SMTTO - 263 - 7TubeSiC1 Channel- 20 V , + 20 V11 nCEnhancement  
IXFH140N20X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-247AD
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IXYS 61
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AUD 18.9522
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           Tube      Hiperfet
IMW65R007M2HXKSA1


MOSFETs SILICON CARBIDE MOSFET
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Infineon 61
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AUD 35.709
Multiples of: 1

171 A650 V8.5 mOhmsN - Channel 5.6 V- 55 C+ 175 C625 WThrough HoleTO - 247 - 3TubeSi1 Channel- 7 V , + 23 V179 nCEnhancement CoolSiC
SWP065R68E7T


68V 100A TO-220 MOSFETs ROHS
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Sam&wing 60
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AUD 0.323
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RTR025N05HZGTL


MOSFET NCH 45V 2.5A SMALL SIGNAL MOSF
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ROHM 60
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AUD 0.3284
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2.5 A45 V130 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtSC - 96 - 3Cut TapeSi1 Channel12 V3.2 nCEnhancementAec - Q101 
BSP297-VB


200V 1A N Channel SOT-223 MOSFETs ROHS
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VBsemi Elec 60
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AUD 0.4292
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NDS9945-NL-JSM


60V 4.5A 30m@10V,4A 1.5W 2 N-Channel SOP-8 MOSFETs ROHS
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JSMSEMI 60
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AUD 0.4608
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SI4944DY-T1-E3-VB


30V 12A 1PCSNChannel SO-8 MOSFETs ROHS
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VBsemi Elec 60
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AUD 0.4896
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